
Allicdata Part #: | IPA50R650CE-ND |
Manufacturer Part#: |
IPA50R650CE |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 6.1A TO220FP |
More Detail: | N-Channel 500V 6.1A (Tc) 27.2W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO-220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 27.2W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 342pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 1.8A, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPA50R650CE is a high performance n-channel enhancement mode MOSFET (metal oxide field effect transistor). This device is optimized for low gate charge and low RDSon making it suitable for high current switching applications. It is sourced from multiple RDSon bins to ensure performance and uniformity across all part numbers. In addition, the IPA50R650CE features excellent switching performance over a wide temperature range.
The basic operation of an MOSFET is based on the principle of electrostriction; in order to pass current, a voltage has to be applied to the gate, which in turn causes a depletion layer to form between the source and the drain. The size of the depletion layer is determined by the voltage applied to the gate, thus by controlling the voltage applied to the gate, the current flow can be regulated. The structure of the IPA50R650CE is composed of a gate, source, and drain in order to control the current flow in between them.
The main application field of the IPA50R650CE is power switching. It is designed for use in applications such as AC/DC converters, power supplies, motor drivers, and DC/DC converters. It is used in high current applications as it has a low RDSon figure, which helps to reduce the power loss during switching. Additionally, the device has a low gate charge which makes it suitable for use in fast switching applications, such as switching mode power supplies and motor drivers.
The working principle of this device is based on the principle of electrostriction, as mentioned earlier. When a voltage is applied to the gate, it forms a depletion layer between the source and the drain. This depletion layer acts as a barrier to the current flow, thus controlling the amount of current passing through the device. In order to allow current to pass through the device, the size of the depletion layer must be reduced, which can be done by increasing the voltage applied to the gate.
The IPA50R650CE has been optimized for low gate charge and low RDSon requirements which makes it suitable for power switching applications. It is available in multiple RDSon bins for a uniform performance across all parts. Additionally, it features excellent switching performance over a wide temperature range. In conclusion, the IPA50R650CE is an ideal solution for high current power switching applications such as AC/DC converters, power supplies, and DC/DC converters.
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