IPA50R650CE Allicdata Electronics
Allicdata Part #:

IPA50R650CE-ND

Manufacturer Part#:

IPA50R650CE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 6.1A TO220FP
More Detail: N-Channel 500V 6.1A (Tc) 27.2W (Tc) Through Hole P...
DataSheet: IPA50R650CE datasheetIPA50R650CE Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO-220-FP
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 27.2W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPA50R650CE is a high performance n-channel enhancement mode MOSFET (metal oxide field effect transistor). This device is optimized for low gate charge and low RDSon making it suitable for high current switching applications. It is sourced from multiple RDSon bins to ensure performance and uniformity across all part numbers. In addition, the IPA50R650CE features excellent switching performance over a wide temperature range.

The basic operation of an MOSFET is based on the principle of electrostriction; in order to pass current, a voltage has to be applied to the gate, which in turn causes a depletion layer to form between the source and the drain. The size of the depletion layer is determined by the voltage applied to the gate, thus by controlling the voltage applied to the gate, the current flow can be regulated. The structure of the IPA50R650CE is composed of a gate, source, and drain in order to control the current flow in between them.

The main application field of the IPA50R650CE is power switching. It is designed for use in applications such as AC/DC converters, power supplies, motor drivers, and DC/DC converters. It is used in high current applications as it has a low RDSon figure, which helps to reduce the power loss during switching. Additionally, the device has a low gate charge which makes it suitable for use in fast switching applications, such as switching mode power supplies and motor drivers.

The working principle of this device is based on the principle of electrostriction, as mentioned earlier. When a voltage is applied to the gate, it forms a depletion layer between the source and the drain. This depletion layer acts as a barrier to the current flow, thus controlling the amount of current passing through the device. In order to allow current to pass through the device, the size of the depletion layer must be reduced, which can be done by increasing the voltage applied to the gate.

The IPA50R650CE has been optimized for low gate charge and low RDSon requirements which makes it suitable for power switching applications. It is available in multiple RDSon bins for a uniform performance across all parts. Additionally, it features excellent switching performance over a wide temperature range. In conclusion, the IPA50R650CE is an ideal solution for high current power switching applications such as AC/DC converters, power supplies, and DC/DC converters.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPA5" Included word is 21
Part Number Manufacturer Price Quantity Description
IPA50R350CPXKSA1 Infineon Tec... 1.64 $ 234 MOSFET N-CH 500V 10A TO22...
IPA50R800CEXKSA2 Infineon Tec... 0.35 $ 1000 MOSFET N-CH 500V 4.1A TO-...
IPA50R380CEXKSA2 Infineon Tec... 0.88 $ 1000 MOSFET N-CH 500V 6.3A TO-...
IPA50R500CE Infineon Tec... -- 1000 MOSFET N-CH 500V 7.6A PG-...
IPA50R280CEXKSA2 Infineon Tec... 1.11 $ 290 MOSFET N-CH 500V 7.5A TO-...
IPA50R800CE Infineon Tec... -- 1000 MOSFET N-CH 500V 5A PG-TO...
IPA50R500CEXKSA2 Infineon Tec... 0.48 $ 1000 MOSFET N-CH 500V 5.4A TO-...
IPA50R520CPXKSA1 Infineon Tec... 1.46 $ 1 MOSFET N-CH 500V 7.1A TO2...
IPA50R140CPXKSA1 Infineon Tec... 3.59 $ 180 MOSFET N-CH 500V 23A TO22...
IPA50R299CPXKSA1 Infineon Tec... -- 1000 MOSFET N-CH 550V 12A TO22...
IPA50R199CPXKSA1 Infineon Tec... 2.47 $ 1000 MOSFET N-CH 500V 17A TO22...
IPA50R280CE Infineon Tec... -- 1000 MOSFET N-CH 500V 13A PG-T...
IPA50R250CPXKSA1 Infineon Tec... 2.1 $ 500 MOSFET N-CH 500V 13A TO22...
IPA50R190CEXKSA2 Infineon Tec... 1.48 $ 1000 MOSFET N-CH 500V 18.5A TO...
IPA50R380CE Infineon Tec... -- 1000 MOSFET N-CH 500V 9.9A TO2...
IPA50R950CEXKSA2 Infineon Tec... 0.67 $ 228 MOSFET N-CH 500V 3.7A TO-...
IPA50R399CPXKSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 500V 9A TO220...
IPA50R950CE Infineon Tec... -- 1000 MOSFET N-CH 500V 4.3A PG-...
IPA50R190CE Infineon Tec... -- 1000 MOSFET N-CH 500V 18.5A TO...
IPA50R650CE Infineon Tec... -- 1000 MOSFET N-CH 500V 6.1A TO2...
IPA50R650CEXKSA2 Infineon Tec... 0.39 $ 1000 MOSFET N-CH 500V 4.6A TO-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics