IPA50R199CPXKSA1 Allicdata Electronics
Allicdata Part #:

IPA50R199CPXKSA1-ND

Manufacturer Part#:

IPA50R199CPXKSA1

Price: $ 2.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 17A TO220-3
More Detail: N-Channel 500V 17A (Tc) 139W (Tc) Through Hole PG-...
DataSheet: IPA50R199CPXKSA1 datasheetIPA50R199CPXKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.24280
10 +: $ 2.00151
100 +: $ 1.64102
500 +: $ 1.32883
1000 +: $ 1.12070
Stock 1000Can Ship Immediately
$ 2.47
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPA50R199CPXKSA1 is a type of single MOSFET which can be deployed in a variety of applications. MOSFETs possess the unique ability to block electrical current flow and subsequently allow it to occur with a gate that attaches power to the main source. As a result, they are used in various switching and amplification applications, such as motor control, variable speed drives, and other customized power control solutions. Furthermore, they are capable of providing greater operating efficiency when compared to other similar devices due to their efficient power handling.

The IPA50R199CPXKSA1 is a unique low on-resistance 2.9m Ohm MOSFET, designed for automotive and industrial applications. It operates in a single channel, offering excellent power handling capabilities for improved efficiency. In addition, its extremely low on-resistance makes it an ideal choice for applications in which current flows or switches quickly. It also offers increased thermal capabilities due to the integrated Schottky diode, while the extremely fast switching speed allows for faster transfer speeds than traditional MOSFETs. Specifically, this device is capable of a maximum drain-source voltage of 70V and a peak drain current of 10A, making it suitable for higher-power applications.

The IPA50R199CPXKSA1 relies on two operating principles for its functionality: Gate Control and Source Follower. In the Gate Control principle, the gate is charged and discharged to control the current flow through the device. This allows for increased power efficiency, as the device can be switched on and off with only minimal current usage. In the Source Follower principle, the source is pulled to match the gate voltage, allowing for improved switching between high and low states.

The IPA50R199CPXKSA1 is suitable for use in a variety of applications, including power converters, solar panel inverters, motor controllers, power factor controllers, and motor drives. It is ideal for applications in which switching speed and efficiency are of paramount importance, such as automotive electronic systems and consumer electronics. This device can also be employed in various power management schemes, as it can supply load current multiple times more efficiently than other devices.

The IPA50R199CPXKSA1 demonstrates the unique capabilities of MOSFETs in terms of power handling and switching speed. Its efficient power-handling capabilities and Schottky diode make it an ideal choice for various applications. The Gate control and Source Follower principles allow for enhanced speed and power efficiency when compared to traditional transistors and MOSFETs. As a result, the IPA50R199CPXKSA1 is a reliable and versatile choice for many automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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