| Allicdata Part #: | IPA50R299CPXKSA1-ND |
| Manufacturer Part#: |
IPA50R299CPXKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 550V 12A TO220-3 |
| More Detail: | N-Channel 550V 12A (Tc) 104W (Tc) Through Hole PG-... |
| DataSheet: |  IPA50R299CPXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3.5V @ 440µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | PG-TO220-FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 299 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 550V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IPA50R299CPXKSA1 is a type of single-channel enhancement mode Field-Effect Transistor (FET). The acronym FET stands for "field-effect transistor" and this kind of transistor is predicated on an applied voltage to the gate causing charge to be induced in the source-drain region. The IPA50R299CPXKSA1 is often used in audio amplifier and radio frequency applications, as well as areas that require input signals with high impedance, such as sensor circuits or power supplies.
The working principle of an IPA50R299CPXKSA1 is relatively straightforward. The IPA50R299CPXKSA1 is an enhancement mode FET, which means that no current flows between the source and drain when a voltage is applied to the gate. When a voltage is applied to the gate, a small amount of current is induced in the source-drain region and this creates a channel between the two structures. This channel allows for current flow from the source to the drain, just like in any other FET device.
The IPA50R299CPXKSA1 device is also preferable to other FETs because it offers an extremely low on-resistance. This low resistance means that the device is able to handle larger currents than other FETs and is thus ideal for high-power applications. The low resistance also allows the device to be used in applications where high speed switching is required and the device is able to switch quickly without creating a lot of heat.
In addition to the low on-resistance, the IPA50R299CPXKSA1 has a relatively low threshold voltage. This means that the device has a very low operating voltage, making it suitable for low power applications as well. The low operating voltage also allows the device to be operated with low gate voltages, which is advantageous in applications where the circuit contains multiple gates.
The IPA50R299CPXKSA1 is an extremely useful and versatile FET. It is useful for a variety of applications, from RF amplifiers to audio amplifiers to power supplies. Its low on-resistance and low threshold voltage allow it to be used in a variety of situations and it is a go to device for many engineers.
The specific data is subject to PDF, and the above content is for reference
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