| Allicdata Part #: | IPA50R399CPXKSA1-ND |
| Manufacturer Part#: |
IPA50R399CPXKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 500V 9A TO220-3 |
| More Detail: | N-Channel 500V 9A (Tc) 83W (Tc) Through Hole PG-TO... |
| DataSheet: |  IPA50R399CPXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 330µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | PG-TO220-FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 399 mOhm @ 4.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IPA50R399CPXKSA1 is one of the most important types of transistors - FETs, MOSFETs - single, and is commonly used for a wide range of purposes. In this article, we will discuss its application field and working principle.
Applications: IPA50R399CPXKSA1 is primarily a power MOSFET that is used in a variety of power electronics applications, ranging from switched-mode power supplies, motor drive and control, audio amplifiers, and motor with variable speed control. It is well-suited to these types of applications due to its low on-state resistance, fast switching speed, and low power loss.
Working Principle: IPA50R399CPXKSA1 is a enhancement type power MOSFET, consisting of a number of N-channel MOS transistors connected in series in the drain-source region. It operates in a dual configuration, with the drain-source voltage providing the gate-source voltage and the gate-source voltage providing the drain-source voltage. In operation, the MOSFET acts as an electrical switch, with the gate-source voltage controlling the on/off state of the device. When the gate-source voltage is above the gate threshold voltage, the device is in its on-state, with the current flow controlled by the gate-source voltage. When the gate-source voltage is below the gate threshold voltage, the device is in its off-state, with no current flow.
Advantages: The main advantage of using IPA50R399CPXKSA1 in power electronic applications is its fast switching speed. It is capable of switching from its off-state to its on-state in less than one microsecond, making it well-suited for applications requiring fast switching speeds. Additionally, it has low on-state resistance and very low power loss when operating, making it efficient and cost-effective to use.
Conclusion: IPA50R399CPXKSA1 is an important type of transistor and is used for a variety of power electronic applications. It is capable of fast switching speeds and has low on-state resistance and low power loss, making it an ideal choice for power applications.
The specific data is subject to PDF, and the above content is for reference
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