IPA50R800CE

Vgs(th) (Max) @ Id:	3.5V @ 130µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	PG-TO-220-FP
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	26.4W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	280pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12.4nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	800 mOhm @ 1.5A, 13V
Drive Voltage (Max Rds On, Min Rds On):	13V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPA50R800CE Application Field and Working PrincipleThe IPA50R800CE is a type of field-effect transistor (FET), specifically a metal-oxide semiconductor field-effect transistor (MOSFET). The device is a single MOSFET with a higher current carrying capacity and better switching performance than most other basic transistor components. It is widely used in various applications including in power transistors, integrated circuits, digital logic and microcontrollers.A MOSFET, or a metal-oxide-semiconductor field-effect transistor, is a type of transistor which operates by changing the electric field between two metal electrodes, separated by a thin layer of oxide. This type of transistor works by modulating the amount of current that can flow between the two electrodes. This is done by varying the amount of voltage applied to the transistor\'s gate, which in turn changes the capacitance of the underlying oxide-semiconductor interface.MOSFETs have distinct advantages over traditional BJT or bipolar junction transistors, such as lower power consumption, better noise immunity and higher switching speeds. Furthermore, MOSFETS offer much higher current carrying capacity and voltage handling capability than most other basic transistors, which makes them particularly suitable for use in higher power applications.The IPA50R800CE is a single MOSFET designed for high performance applications. It incorporates both low on-resistance and drain-to-source breakdown voltage, while still offering relatively low power dissipation. It is primarily used in switching applications, such as motor speed controllers, IGBT (Insulated-Gate Bipolar Transistor) inverters, high power DC-DC converters and many other applications where fast switching and low on-state resistance is required.The device is also suitable for automotive applications and is rated for operation at temperatures up to 125°C. It is available in 8-pin (TO-220), 8-bump (SW-TSOP) and 14-pin (TO-263) packages, making it well suited to a variety of applications.In summary, the IPA50R800CE is a high performance single MOSFET which is capable of handling high currents and is rated for operation at temperatures up to 125°C. It offers low on-resistance and drain-to-source breakdown voltages, making it suitable for a variety of applications including switching applications, motor speed controllers and high power DC-DC converters.

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