IPA50R190CE

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The IPA50R190CE is a low voltage high current N-Channel Enhancement Mode MOSFET. It is a common component used in many digital and analog circuits, such as in power supply circuits, motor-control circuits, switching circuits, and other high-current or low voltage applications. It is characterized by excellent thermal and electrical performance and high switching speed. This MOSFET also offers extended temperature range operation with as low as -40°C and as high as 150°C.

A MOSFET is a Metal Oxide Semiconductor Field Effect Transistor, and it operates on the principle of field-effect, whereby electrons generated in the channel when gate voltage is applied create an electric field which controls the resistance of the channel. The IPA50R190CE is an enhancement mode MOSFET, meaning that the source-channel resistance is low when the gate voltage is zero, and increases as the gate voltage increases. This makes it an inverting device, allowing it to be used as a change in input to a change in output in a circuit.

The IPA50R190CE is especially suited for use in low voltage circuits, since it has a lower turn on voltage than other MOSFETs and can handle both high current and high voltage. It is an economical solution for low to mid range DC-DC conversion, motor controls, and other low power circuits. In addition, it has a very low Gate-source capacitance which makes it ideal for high frequency switching.

The maximum voltage and current rating of the IPA50R190CE are 50V and 190A, respectively. It has a Drain-Source resistance of 8.5 mΩ, which is quite low for a MOSFET. The RDS(on) is given as 7.2 at 25°C and 7.6 mΩ at 75°C. Additionally, the IPA50R190CE has a maximum Gate-Source voltage of +-20V and a Gate-Drain leakage current of 8nA.

The main application for this MOSFET is in integrated circuits, where its low Gate-Source capacitance and RDS(on) make it an attractive choice for high frequency switching and low current operation. It is also used in motor control and battery backup circuits. This MOSFET is not suitable for high voltage, high power applications due to its lower Rdson under high temperature and its high gate-source capacitance.

The IPA50R190CE MOSFET is an excellent choice for low voltage and low current applications, due to its low Rdson, high switching speed, and low gate-source capacitance. It can be used in a wide range of integrated circuits and switching applications. With its extended temperature range operation, it is able to meet the requirements of many applications.

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