IPA50R280CE Allicdata Electronics
Allicdata Part #:

IPA50R280CEIN-ND

Manufacturer Part#:

IPA50R280CE

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 13A PG-TO220FP
More Detail: N-Channel 500V 13A (Tc) 30.4W (Tc) Through Hole PG...
DataSheet: IPA50R280CE datasheetIPA50R280CE Datasheet/PDF
Quantity: 1000
1 +: $ 0.27000
10 +: $ 0.26190
100 +: $ 0.25650
1000 +: $ 0.25110
10000 +: $ 0.24300
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30.4W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Field-effect transistors (FETs) are three-terminal devices that use electric field to control its electrical characteristics. They are used in a variety of applications due to their wide range of functions, low power requirements and relatively low cost. The IPA50R280CE FET is one of the popular options for any application involving precise current control.

The IPA50R280CE FET is a single from the PowerPAK SO-8 family. It is a standard MOSFET device that has a very low thermal resistance and a high-power capability. The on-resistance of the transistor is in the order of 280mΩ and the breakdown voltage, or peak voltage, can range from 650V to 750V. The start-up drain current of the FET is typically 2-5mA and the maximum drain source resistance is 5.9mΩ.

The working principle of the IPA50R280CE FET is quite simple. It is a three-terminal device consisting of a gate, a source and a drain. The gate is a voltage-controlled switch. When a voltage is applied between the gate and the source, the electrons in the conduction channel between the source and the drain move and create a current that acts as the drain current. This current is completely dependent on the gate voltage and is sometimes referred to as a “threshold voltage”.

The IPA50R280CE FET can be used for a wide range of applications. It is used as a power switch, as a protection switch for integrated circuits, as a voltage regulator, as a current stabilizer, and even as a temperature control switch. The device is popular in power management systems and is also used in many digital circuits. It is widely used in automotive and aviation industries as well.

When choosing the right FET for an electronic project, it’s important to consider the overall requirements and desired features. The IPA50R280CE FET is a reliable, low-cost solution for a variety of applications. Its high power capability and low thermal resistance make it an ideal choice for any project that requires precise current control.

The specific data is subject to PDF, and the above content is for reference

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