IPA50R950CE

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Field-Effect Transistors, such as the IPA50R950CE, are solid-state devices which can easily perform several functions, such as amplification, switching, and voltage regulation. This type of transistor operates on the principle of controlling the electrical current flow between two terminals – the gate and the source – with a third terminal, the drain. To achieve this, the gate is given a small amount of charge to create an electric field in between it and the source and drain. When the correct amount of voltage is applied, the electric field will induce a current at the source, enabling the current to flow through the device and regulate the output voltage.

Specifically, the IPA50R950CE is a Single Depletion Mode N-Channel Enhancement Mode Field Effect Transistor (FET). This device features a number of features that make it ideal for a wide range of applications. It has a high current continuous drain-source rating of 50A, high peak current voltage of 950V, and a low static on-state resistance of 0.07 Ω (typical). The FET also features an output voltage range of 2-5V and a maximum switch-on resistance of 0.4 Ω (typical).

The IPA50R95CE has several advantages over traditional transistors. For example, it has a much lower static current requirement than a traditional bipolar junction transistor (BJT) and requires much less input power to achieve its switch-on voltage. Additionally, the low-leakage characteristics of FETs make them more reliable than BJTs. Moreover, due to the thin-film construction of FETs, they are not prone to thermal runaway, allowing them to operate over a much wider temperature range than BJTs.

The IPA50R950CE is well suited for a variety of applications. It is commonly used in power supplies, UPS systems, and motor drives as a fast switch with its high output current, low on-state resistance, and low input voltage rating. Additionally, its low static current requirement makes it ideal for battery-powered devices. It can also be used in audio amplifiers, ADSL modems, and portable devices for its low on-state resistance and output voltage range.

In summary, the IPA50R950CE is a single N-channel Enhancement Mode FET that is well-suited for a wide variety of applications. It has a high current continuous drain-source rating, high peak current voltage, and low static on-state resistance. Additionally, the FETs low-leakage characteristics and thin-film construction make it more reliable than traditional BJT transistors. It is commonly used in power supplies, UPS systems, and motor drives, as well as audio amplifiers, ADSL modems, and other portable devices.

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