| Allicdata Part #: | IPB010N06NATMA1TR-ND |
| Manufacturer Part#: |
IPB010N06NATMA1 |
| Price: | $ 2.66 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 45A TO263-7 |
| More Detail: | N-Channel 60V 45A (Ta), 180A (Tc) 300W (Tc) Surfac... |
| DataSheet: | IPB010N06NATMA1 Datasheet/PDF |
| Quantity: | 13000 |
| 1000 +: | $ 2.42133 |
| Vgs(th) (Max) @ Id: | 4V @ 280µA |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package: | PG-TO263-7 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 208nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 1 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Ta), 180A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IPB010N06NATMA1 is a power MOSFET which belongs to a family of field effect transistors (FETs). Field effect transistors utilize an electric field to control current and voltage, so they are considered more efficient and reliable than traditional bipolar transistors. In particular, the IPB010N06NATMA1 is a single-gate MOSFET, a type of FET which is particularly useful in the application of power electronics. This power MOSFET is suitable for a variety of applications, including motor controls and power converters, and is also able to perform efficiently in medical, consumer, and industrial products.
The working principle of the IPB010N06NATMA1 is relatively simple. The power MOSFET is controlled by a voltage applied through its gate terminal. When a positive voltage is applied, it causes a channel, or path of electrons, to be created between the drain and the source, allowing current to pass through. This creates a low on resistance which allows for the efficient transfer of power. When the voltage is removed, the channel is destroyed, and the current is stopped.
The IPB010N06NATMA1 has several advantages that make it well-suited for certain applications. Due to its low on resistance and fast switching speeds, it is able to provide significant power savings compared to bipolar transistors. Additionally, it has excellent thermal stability and is able to operate reliably in high temperature environments. It is also capable of preventing interference caused by electrical noise due to its integrated shield, making it an ideal choice for applications in noisy environments.
The IPB010N06NATMA1 power MOSFET has a multitude of advantages which make it a excellent choice for a variety of applications. It is energy-efficient and reliable, and also capable of operating in high temperature environments. In addition, it is able to prevent electrical interference due to its built-in shield. For these reasons, it is an irreplaceable device for use in motor controls, power converters, medical products, consumer electronics, and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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IPB010N06NATMA1 Datasheet/PDF