| Allicdata Part #: | IPB04N03LAXTINTR-ND |
| Manufacturer Part#: |
IPB04N03LAT |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 80A D2PAK |
| More Detail: | N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-... |
| DataSheet: | IPB04N03LAT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 60µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | PG-TO263-3-2 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 107W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3877pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 55A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IPB04N03LAT is a N-channel Enhancement mode MOSFET with an operating voltage range between 4.5V to 16V. It is commonly used in digital and analog switching applications, as well as DC motor drive circuits. The device is suitable for use in relay-replacement applications where a low-side MOSFET switch is required. There are also various package options available with this device, making it a great choice for power switching applications.
The IPB04N03LAT is capable of carrying loads up to 4A and continuous currents up to 4A. This makes it suitable for replacing electromechanical relays and load switches. This MOSFET also provides excellent switching performance with minimal drive voltage, which makes it a great choice for budget-conscious applications. Additionally, the device has low on-resistance and enables low power dissipation.
The IPB04N03LAT device functions through an internal ESD protection diode which allows for fast switching times. In addition, the IPB04N03LAT device is rated to withstand ESD voltages up to 10kV. This makes it a great choice for use in high-precision, voltage sensitive, and also ESD sensitive applications.
The device works on a principle known as the Enhancement Mode in MOS technology. This mode is used when an enhanced electrical field is used to enable interference between an oxide layer and an underlying layer, known as the substrate. This leads to a controlled depletion region that decreases with positive voltages, which leads to a significantly reduced current and a higher resistance.
The IPB04N03LAT is most commonly used in low-side switching applications, such as automotive switching applications, DC motor drive applications, and for achieving high switching speeds. The device also has a low on-state resistance, which helps minimize conduction losses and improve efficiency.
The device has been developed to overcome variations in load and voltage supply by utilizing the characteristics of the MOSFET transistor. In addition to its reliability, the device provides fast switching times, easy control, and advanced protection mechanisms.
The IPB04N03LAT is a high-performance, yet cost-effective product that is ideal for a variety of applications. It can be used in high power switching applications, as well as low-side switching applications, and is suitable for use in harsh conditions such as automotive and ESD-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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IPB04N03LAT Datasheet/PDF