IPB072N15N3GATMA1

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The IPB072N15N3GATMA1 is a single enhancement-mode N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is particularly well-suited for through-hole (TH) packaging and PCB designs. This device offers excellent thermal properties, improved power efficiency, and low conduction losses along with a wide range of application fields.

MOSFETs, especially single-channel devices, have traditionally been used as power switches and logic level transistors in a variety of embedded designs. In addition to being used as a power switch, the IPB072N15N3GATMA1 also is suitable for switching heavy loads, voltage level shifting, amplifier designs, and even low-frequency inverter or pulse-width modulation design applications.

The IPB072N15N3GATMA1 features a Gate-Source voltage of 30 volts maximum and the Source-Drain maximum voltage of 30 volts. It has a low on-resistance from 115mOhm to 150mOhm, making it more efficient and power-friendly than other commercial products that similarly boast an enhanced thermal performance. The maximum source-drain leakage current at 25°C is 7A and its continuous drain current (Also called IDSS) is also 20A at T_amb=25°C.

This particular device also has a wide operating temperature range, from -55°C to 175°C, and it can handle pulse drain currents of up to 75A. It has a Drain-Source breakdown voltage of greater than 170V at 1mA (at 25°C). This device is also available with different values of Absolyte thermal coefficient due to the fact that it is a through-hole device for PCB mounting.

The IPB072N15N3GATMA1 works by allowing reverse current from the drain to the source when a positive voltage is applied to the gate. This triggers an electron field to be generated at the gate electrode, which then controls the drain current that flows from the drain to the source. This enhances operating and switching efficiency, lowers conduction losses, and increases power efficiency.

In terms of design parameters, critical parameters to consider include the gate-source voltage, the source-drain voltage, and the maximum allowed gate current. This can be specified according to the requirements of the application being used. Additionally, the MOSFET has a wide range of applications and can be used in a number of different markets, including medical, aviation, industrial, and automotive.

The IPB072N15N3GATMA1 is an ideal choice for a variety of applications due to its streamlined operation, efficiency, thermal performance, and affordability. It offers a low on-resistance and breakdown voltage, as well as a wide operating temperature range to operate efficiently within any environment. Along with its excellent features, the device is also easy to integrate into existing designs and proves to be a cost-effective solution for many types of designs.

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