
Allicdata Part #: | IPB03N03LBGINTR-ND |
Manufacturer Part#: |
IPB03N03LB G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 80A TO-263 |
More Detail: | N-Channel 30V 80A (Tc) 150W (Tc) Surface Mount D²P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7624pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB03N03LB G is a single-field effect transistor (FET), specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device that is widely used in many electronic circuits to control current flow in a variety of applications. The device is also used to amplify, switch, and regulate voltage in power electronics.
The key properties of the IPB03N03LB G are its low on-state resistance, high frequency operation, and ability to withstand high current. These attributes make it suitable for a variety of applications in data processing, computing, and power electronics. In power electronics, the device can be used to control the speed of a motor or the level of a current in a circuit. The low on-state resistance of the FET helps to reduce power loss.
The device consists of four layers: a drain layer, source layer, channel layer, and gate layer. When a voltage is applied to the gate, it attracts electrical charge from the surrounding environment and creates an electrical field. This field influences the current flow between the drain and source, allowing the user to control the current. The controlled current flow is used to amplify, switch, or regulate voltage in various applications.
The operation of the IPB03N03LB G can be characterized by four basic states: cut-off, subthreshold, breakdown avalanche, and saturation. In the cut-off state, no current can pass through the device. In the subthreshold state, a small current can pass through the device but it is too small to be useful in most applications. In the breakdown avalanche state, the device can pass a large amount of current as voltage breaks down across the drain-source junction. In the saturation state, the FET is fully on and provides maximum current flow through the device.
The IPB03N03LB G is suitable for a variety of applications thanks to its low on-state resistance, high frequency operation, and ability to withstand high current. In addition, its four-layer construction makes it easier to integrate into existing circuits and systems. It is therefore a major component in many different types of electronics, from laptop computers to industrial automation systems.
The specific data is subject to PDF, and the above content is for reference
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