IPB03N03LB G Allicdata Electronics
Allicdata Part #:

IPB03N03LBGINTR-ND

Manufacturer Part#:

IPB03N03LB G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 80A TO-263
More Detail: N-Channel 30V 80A (Tc) 150W (Tc) Surface Mount D²P...
DataSheet: IPB03N03LB G datasheetIPB03N03LB G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB03N03LB G is a single-field effect transistor (FET), specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device that is widely used in many electronic circuits to control current flow in a variety of applications. The device is also used to amplify, switch, and regulate voltage in power electronics.

The key properties of the IPB03N03LB G are its low on-state resistance, high frequency operation, and ability to withstand high current. These attributes make it suitable for a variety of applications in data processing, computing, and power electronics. In power electronics, the device can be used to control the speed of a motor or the level of a current in a circuit. The low on-state resistance of the FET helps to reduce power loss.

The device consists of four layers: a drain layer, source layer, channel layer, and gate layer. When a voltage is applied to the gate, it attracts electrical charge from the surrounding environment and creates an electrical field. This field influences the current flow between the drain and source, allowing the user to control the current. The controlled current flow is used to amplify, switch, or regulate voltage in various applications.

The operation of the IPB03N03LB G can be characterized by four basic states: cut-off, subthreshold, breakdown avalanche, and saturation. In the cut-off state, no current can pass through the device. In the subthreshold state, a small current can pass through the device but it is too small to be useful in most applications. In the breakdown avalanche state, the device can pass a large amount of current as voltage breaks down across the drain-source junction. In the saturation state, the FET is fully on and provides maximum current flow through the device.

The IPB03N03LB G is suitable for a variety of applications thanks to its low on-state resistance, high frequency operation, and ability to withstand high current. In addition, its four-layer construction makes it easier to integrate into existing circuits and systems. It is therefore a major component in many different types of electronics, from laptop computers to industrial automation systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPB0" Included word is 40
Part Number Manufacturer Price Quantity Description
IPB054N08N3GATMA1 Infineon Tec... 0.62 $ 1000 MOSFET N-CH 80V 80A TO263...
IPB05N03LA G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 80A D2PAK...
IPB052N04NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 70A TO263...
IPB042N03LGATMA1 Infineon Tec... 0.56 $ 1000 MOSFET N-CH 30V 70A TO-26...
IPB050N06NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 100A TO-2...
IPB017N10N5ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 100V 180A D2P...
IPB083N15N5LFATMA1 Infineon Tec... 2.14 $ 1000 MOSFET N-CH 150V 105A TO2...
IPB019N08N5ATMA1 Infineon Tec... 2.14 $ 1000 DIFFERENTIATED MOSFETS
IPB06N03LA G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB06N03LAT Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB014N06NATMA1 Infineon Tec... 1.53 $ 1000 MOSFET N-CH 60V 34A TO263...
IPB020N10N5LFATMA1 Infineon Tec... 2.87 $ 1000 MOSFET N-CH 100V D2PAK-3N...
IPB022N04LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 90A TO263...
IPB05N03LB Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB037N06N3GATMA1 Infineon Tec... 0.6 $ 1000 MOSFET N-CH 60V 90A TO263...
IPB096N03LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 35A TO-26...
IPB020N08N5ATMA1 Infineon Tec... -- 2000 MOSFET N-CH 80V 140A TO26...
IPB03N03LB G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A TO-26...
IPB019N06L3GATMA1 Infineon Tec... 1.71 $ 1000 MOSFET N-CH 60V 120A TO26...
IPB065N15N3GE8187ATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 150V 130A TO2...
IPB009N03LGATMA1 Infineon Tec... 1.44 $ 4000 MOSFET N-CH 30V 180A TO26...
IPB031NE7N3GATMA1 Infineon Tec... 1.26 $ 1000 MOSFET N-CH 75V 100A TO26...
IPB065N10N3GATMA1 Infineon Tec... 0.95 $ 1000 MOSFET N-CH TO263-3N-Chan...
IPB067N08N3GATMA1 Infineon Tec... 0.85 $ 1000 MOSFET N-CH 80V 80A TO263...
IPB017N08N5ATMA1 Infineon Tec... 2.28 $ 2000 MOSFET N-CH 80V 120A D2PA...
IPB048N15N5ATMA1 Infineon Tec... 2.72 $ 1000 MOSFET N-CH 150V 120A TO2...
IPB04N03LB G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB042N10N3GATMA1 Infineon Tec... -- 3000 MOSFET N-CH 100V 100A TO2...
IPB036N12N3GATMA1 Infineon Tec... 2.77 $ 1000 MOSFET N-CH 120V 180A TO2...
IPB03N03LA Infineon Tec... -- 1000 MOSFET N-CH 25V 80A D2PAK...
IPB09N03LAT Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB048N06LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 100A TO-2...
IPB011N04NGATMA1 Infineon Tec... -- 1000 MOSFET N-CH 40V 180A TO26...
IPB024N10N5ATMA1 Infineon Tec... 2.0 $ 1000 MOSFET N-CH 100V 180A TO2...
IPB06CN10N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 100A TO2...
IPB015N04LGATMA1 Infineon Tec... 1.65 $ 1000 MOSFET N-CH 40V 120A TO26...
IPB026N06NATMA1 Infineon Tec... 0.98 $ 1000 MOSFET N-CH 60V 25A TO263...
IPB09N03LA G Infineon Tec... -- 1000 MOSFET N-CH 25V 50A D2PAK...
IPB027N10N5ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 100V 120A D2P...
IPB065N06L G Infineon Tec... -- 1000 MOSFET N-CH 60V 80A D2PAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics