IPB080N03LGATMA1

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	47W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB080N03LGATMA1 MOSFET is a powerful, yet compact, N- channel power management FET. It is constructed with complementary N-Channel MOSFETs in an isolated SO8 package, which makes the device well suited for a variety of applications in the automotive, industrial, consumer and computer electronics markets. The IPB080N03LGATMA1 is a high input impedance N-Channel MOSFET, with a low on-resistance and excellent switching performance. The MOSFET is also characterized by excellent characteristics and reliability. Its breakdown voltage is up to 200V, RDS(on) is up to 0.08Ω, and the junction temperature range is from -55 to +150°C. It also features low gate charge and low Coss. These features make the device ideal for a wide range of applications, including high-performance power management, audio/video switching and high-speed communications.The IPB080N03LGATMA1 is a versatile, single-ended N-Channel MOSFET, and can be used in a variety of circuits. It is well suited to linear applications, because of its high transconductance. In this mode the IPB080N03LGATMA1 functions as a current amplifier, to regulate the output current in the circuit. This can be used to control the power output of a power supply, or the speed of a motor. It is also possible to use the device in switching applications, due to its low on-resistance, low gate charge and low Coss. In this mode, the IPB080N03LGATMA1 can be used as an electronic switch, to control the flow of current to and from the load.The device’s excellent characteristics and reliability lend it to a variety of other applications as well. It can be used as an inverted Schottky diode, to protect sensitive devices from excessive currents. It can also be used as a linear regulator or rectifier to control the output of a power supply, or as a high-side switch, to control the flow of current to a load.The device\'s low on-resistance, low gate charge and low Coss, make it an ideal choice for high speed switching and high-performance power management equipment. It can be used in a variety of applications across industries, from automotive applications, to consumer and computer electronics. The device can be used to control the speed of motors, regulate and protect sensitive devices, as well as provide high-speed currents.The working principle of the IPB080N03LGATMA1 MOSFET is relatively simple. The device consists of four pins; the gate terminal, the source terminal, the drain terminal and the substrate terminal (body or back-gate). When the voltage at the gate terminal is increased, the current flowing through the source-drain channel of the device is also increased. The current is controlled by the resistivity of the channel, and is proportional to the voltage at the gate. As the voltage at the gate is increased, the channel\'s resistivity decreases, and the current increases. In general, the MOSFET can be used to switch between two states; in a “on” state, current is allowed to flow through the device, and in a “off” state, current flow is stopped. The MOSFET can be used to control the flow of current through a load in either of these states, depending on the voltage at the gate. The device can be used in a variety of switching and power management applications, to control the flow of current to a load.The IPB080N03LGATMA1 is an effective and reliable device for a wide range of applications, from automotive, industrial, consumer and computer electronics. Its low on-resistance, low gate charge and low Coss, make it an excellent choice for high speed switching applications. It is also very reliable, with a breakdown voltage up to 200V and a junction temperature range of -55 to +150°C. It is an ideal choice for high-performance power management, audio/video switching and high-speed communications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description