IPB025N08N3GATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB025N08N3GATMA1 is a N-channel MOSFET with a high voltage. It consists of vertical double diffused MOS (VDMOS) technology and is designed for high voltage switching applications such as inductive relay drivers, low side switch drivers, lamp drivers, AC or DC load switching, and power MOSFET drivers. In many MOSFET applications, it is difficult to produce reliable operation with high voltage breakdown levels and low RDSon. The use of VDMOS technology provides a method to combine high breakdown voltages and low RDSon up to 500V.

The IPB025N08N3GATMA1 is capable of handling up to 25A of continuous current and up to -12V of gate-source voltage (Vgs). It has a typical RDS(on) of 0.0025 ohms and a 500V breakdown voltage. This MOSFET is available in through-hole and surface mount packages. The IPB025N08N3GATMA1 is suitable for efficient switch mode power supply (SMPS) applications, particularly in low side switch drivers, motor control gate drivers, and lamp drivers.

The working principle of the IPB025N08N3GATMA1 is based on the Gate controlled current flow principle of MOSFETs. When the gate voltage is applied to the MOSFET, the gate generates charge carriers, or electrons, which travel from the source (S) to the drain (D) and form a conductive path. The number of charge carriers is related to the applied gate voltage (Vgs), which determines the amount of current that can pass through the MOSFET. A higher gate voltage will produce more charge carriers and thus allow more current to flow.

The IPB025N08N3GATMA1 has numerous advantages in applications such as motor control applications, low side switch drivers, lamp drivers, AC or DC load switching, and power MOSFET drivers. It has a high breakdown voltage of 500V, a low RDSon, and can support up to 25A of continuous current. Furthermore, the use of VDMOS technology allows for combining both high breakdown voltage and low RDSon levels. This makes the IPB025N08N3GATMA1 suitable for a variety of applications due to its low power consumption, high switching speed and reliability.

The specific data is subject to PDF, and the above content is for reference