IPB034N06L3GATMA1 Allicdata Electronics
Allicdata Part #:

IPB034N06L3GATMA1TR-ND

Manufacturer Part#:

IPB034N06L3GATMA1

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 90A TO263-3
More Detail: N-Channel 60V 90A (Tc) 167W (Tc) Surface Mount D²P...
DataSheet: IPB034N06L3GATMA1 datasheetIPB034N06L3GATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.60000
10 +: $ 0.58200
100 +: $ 0.57000
1000 +: $ 0.55800
10000 +: $ 0.54000
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPB034N06L3GATMA1 is a type of single MOSFET transistor, which is short for Metal-Oxide-Semiconductor Field-Effect Transistor. It is a voltage-controlled field-effect transistor that utilizes metal-oxide-semiconductor technology. It is widely used in industrial electronics and other applications which require switching and amplification.

This type of MOSFET has a maximum drain-to-source voltage of 29 V, a drain current of 34 A, and a breakdown voltage of 43 V. It also has a gate charge of 5.4 nC, a Miller capacitance of 392 pF, and a gate-source capacitance of 10.5 pF. The single MOSFET is available in an TO-220 package, which is suitable for through-hole mounting. It is rated for high temperatures, up to 175°C.

Application Field and Working Principle

IPB034N06L3GATMA1 is used in a wide variety of applications. It is commonly used for switching and amplification in industrial electronics, as well as a variety of other applications, such as motor control, lighting, switching power supplies, and battery management. It is also used in automotive applications, such as airbag control, antilock braking systems, and engine control.

The transistor has a working principle based on the fact that it acts as a switch between two terminals: the gate and the source. When the voltage applied to the gate is increased, it induces an electric field that attracts carriers of a specified type--in this case, either electrons or holes--to the surface of the semiconductor material. This results in a flow of current between the source and the drain. The amount of current that flows can be controlled by adjusting the gate voltage, making the device a switch or an amplifier.

The MOSFET is also capable of operating in both polarities, meaning that it can be used as either a P-channel or an N-channel device. This makes it very versatile and useful in many applications. It also has a low on-resistance, meaning that it has very high switching speeds and can be used to switch large amounts of current with minimal power loss.

IPB034N06L3GATMA1 is a reliable and efficient MOSFET transistors that is suitable for a wide range of applications. With its low on-resistance and high switching speeds, it is ideal for use in industrial electronics, automotive applications, or any other application where quick response time and reliable switching are required.

The specific data is subject to PDF, and the above content is for reference

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