IPC60N04S406ATMA1 Allicdata Electronics
Allicdata Part #:

IPC60N04S406ATMA1-ND

Manufacturer Part#:

IPC60N04S406ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TDSON
More Detail: N-Channel 40V 60A (Tc) 63W (Tc) Surface Mount PG-T...
DataSheet: IPC60N04S406ATMA1 datasheetIPC60N04S406ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 30µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IPC60N04S406ATMA1 is part of a family of lateral N-channel MOSFETs manufactured by International Rectifier. This device is helpful in a varied range of applications, including power management, voltage regulation and switching. The IPC60N04S406ATMA1 is a 60V N-Channel MOSFET that features a maximum drain source voltage of 60V, a drain source on resistance (RDS(on)) of 4Ω, and a maximum drain current of 94A. It has an integrated Schottky diode, which is a device that combines both a PN junction diode and a metal-semiconductor junction. It also includes a maximum junction temperature of 175°C, and a drain-source voltage of 90V. The IPC60N04S406ATMA1 operates on a drain-gate voltage of 6V and has a power dissipation of 3.2W.

The IPC60N04S406ATMA1 is considered a single-gate power MOSFET, and is typically used in high-voltage and low-power applications. It is an effective device for use in power supplies, energy management, motor control, and motor drive applications. It is capable of providing both a high-current and low-voltage performance. Furthermore, it is designed to reduce switching losses and reduce total system power consumption. It is also capable of reducing EMI, which is important in many industrial applications.

The IPC60N04S406ATMA1 is an ideal device for use in high power switch mode power supplies (SMPS)s, as it is capable of delivering high peak and low-average currents. It can also be used in high-efficiency DC—DC converters, with the ability to provide fast switching and to save power consumption. The device can also be used for high-frequency switching, due to its low capacitance.

The IPC60N04S406ATMA1 device operates on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET). This architecture provides a transistor with a gate, drain, and source terminals. A metal oxide layer is situated between the gate and the source, which acts as a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET works by applying a voltage to the gate terminal. This voltage creates an electric field which depletes the majority carriers in the channel region, thus allowing a current to pass through the source and the drain. This motor provides a low impedance when the gate-source voltage is greater than a certain threshold voltage.

The IPC60N04S406ATMA1 is an effective device for use in a variety of applications, due to its high-current and low-voltage performance. It is designed to reduce switching losses and reduce system power consumption, and is capable of providing fast switching. Additionally, its integrated Schottky diode helps to improve performance and ensure speedy recovery. With its low capacitance, the device is well-suited for use in high-frequency switching responsibilities.

The specific data is subject to PDF, and the above content is for reference

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