![IPC60R380C6X7SA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IPC60R380C6X7SA1-ND |
Manufacturer Part#: |
IPC60R380C6X7SA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Last Time Buy |
Description
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IPC60R380C6X7SA1 Application Field and Working Principle
The IPC60R380C6X7SA1 is a high-performance field-effect transistor (FET) designed for applications such as general-purpose switching, power management and signal conditioning. It is typically used as a replacement for an older and more power-hungry bipolar transistor, providing improved efficiency and lower power dissipation.The IPC60R380C6X7SA1 is a single enhancement-mode MOSFET. It is particularly suitable for applications where low gate drive is required. The device utilizes a strong silicon nitride passivation layer, which results in excellent high temperature operation. The device also incorporates an advanced protection circuit to protect against gate over-voltages and drain over-current conditions.The operating principle of the IPC60R380C6X7SA1 is relatively simple. A gate voltage is applied to the transistor and this causes an electric field to form around a portion of the gate electrode. This electric field causes a conductive channel to form between the drain and the source of the transistor. The gate voltage determines the current that can flow through the channel, so different gate voltages will produce different levels of current.The IPC60R380C6X7SA1 is suitable for a variety of applications, such as DC/DC converters, DC/AC inverters, 1-phase AC/DC converters and motor control. In these applications, the device can be used to switch power on and off, control the speed of motors, and provide protection against high currents.In order to fully appreciate the working of IPC60R380C6X7SA1, one needs to understand the concept of the source and drain. The source is the electrode where current enters the device, while the drain is the electrode from which current leaves the device. In between these two electrodes is the channel which can be modulated by a gate voltage, causing a varying amount of current to flow between the source and the drain.The IPC60R380C6X7SA1 also features a temperature-sensing capability, which allows it to be used in temperature-sensitive applications. The device incorporates a thermal resistance that can be used to measure the junction temperature of the device, allowing it to be adjusted to maintain the desired temperature.In summary, the IPC60R380C6X7SA1 is a single enhancement-mode MOSFET that is suitable for a variety of applications. Its simplicity of operation and wide variety of application fields make it a popular choice for power management, general-purpose switching and signal conditioning applications. Its temperature-sensing capability adds to its appeal, since this feature makes it suitable for temperature-sensitive applications.The specific data is subject to PDF, and the above content is for reference
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