Name: IPC60R070C6X1SA1
Brand: Infineon Technologies
SKU: IPC60R070C6X1SA1-ND
Price: 3.92 USD
Availability: InStock

Allicdata Part #:	IPC60R070C6X1SA1-ND
Manufacturer Part#:	IPC60R070C6X1SA1
Price:	$ 3.92
Product Category:	Discrete Semiconductor Products
Manufacturer:	Infineon Technologies
Short Description:	MOSFET N-CH BARE DIE
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DataSheet:	IPC60R070C6X1SA1 Datasheet/PDF
Quantity:	1000

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$ 3.52883

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Specifications

Series:	*
Part Status:	Not For New Designs

Description

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The IPC60R070C6X1SA1 is a type of insulated-gate field-effect transistor (IGFET), also commonly referred to as a MOSFET (Metal-Oxide-Semiconductor FET). It is a type of single-gate FET, meaning that it has only one gate input or control terminal that operates when a voltage is applied to it. The IPC60R070C6X1SA1 is a power MOSFET, meaning it is designed for use in circuits that require high-power rating.

The IPC60R070C6X1SA1 has several features that make it desirable for a variety of applications. It is designed to handle large voltage and power levels, has a low on-state resistance, and has an excellent current-handling ability. It is also protected against damaging effects caused by voltage spikes and electrostatic discharge.

In terms of application field, the IPC60R070C6X1SA1 is well-suited for uses in power conversion systems such as switching DC/DC converters, AC/DC inverters, motor control, and power switching circuits. It is also used in applications requiring low to moderate power levels, such as sensing, signal conditioning, and small-signal switching.

The IPC60R070C6X1SA1 operates according to the principle of the MOSFET transistor. In this type of transistor, the drain and source terminals are connected to a semiconductor substrate, usually silicon. An insulating layer between the substrate and the gate ensures that the voltage applied to the gate does not affect the other two terminals.

When a voltage is applied to the gate of the IPC60R070C6X1SA1, it creates an electric field that induces charge carriers to move between the drain and source terminals. This movement of charge carriers is what causes current to flow through the IPC60R070C6X1SA1. By varying the gate voltage of the IPC60R070C6X1SA1, the current through it can be precisely controlled.

The IPC60R070C6X1SA1\'s insulation between the gate and the substrate effectively regulates the current flowing between the drain and source terminals. It can be used as either an amplifier or switch, allowing it to be used in a variety of circuit applications. Its integration of power, low resistance, and high current carrying capability make it ideal for a number of different applications.

The specific data is subject to PDF, and the above content is for reference

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IPC60R070C6X1SA1-ND

IPC60R070C6X1SA1

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