Name: IPC60R160C6X1SA1
Brand: Infineon Technologies
SKU: IPC60R160C6X1SA1-ND
Price: 1.66 USD
Availability: InStock

Allicdata Part #:	IPC60R160C6X1SA1-ND
Manufacturer Part#:	IPC60R160C6X1SA1
Price:	$ 1.66
Product Category:	Discrete Semiconductor Products
Manufacturer:	Infineon Technologies
Short Description:	MOSFET N-CH BARE DIE
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DataSheet:	IPC60R160C6X1SA1 Datasheet/PDF
Quantity:	1000

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Specifications

Series:	*
Part Status:	Active

Description

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The IPC60R160C6X1SA1 is a single N-Channel enhancement mode Field-Effect Transistor (FET), its symbol diagram is below:

IPC60R160C6X1SA1 Symbol

This FET can control relatively low current signals (<3.0A) at low voltages (<160V). It has a maximum drain-source breakdown voltage of 160V and can handle up to 30W of power in the TO-220-2 case.

Application Fields

The IPC60R160C6X1SA1 provides excellent features that allow it to be used in a variety of applications. Its low on-resistance and superior gate charge characteristics make it an ideal choice for:

Switching applications
Motor control
DC/DC converter design
Low and high side switch
Automotive ballast
Step down switching regulator
Hot swap application
Any application that requires various sizes and fast switching characteristics

Working Principle

The basic principle of an enhancement mode MOSFET is that a very small gate-to-source voltage (V_GS) is applied to the device to turn it on. When V_GS is above the threshold voltage, electrons are injected into the channel, resulting in a conducting channel between the source and the drain.

The maximum drain current (I_D) is limited by the R_DSon value. This value can be obtained from specifications of the device and it is a measure of how low the device can go during full on operation.

An important parameter to consider when designing with MOSFETs is the maximum gate-source voltage (V_GS) of the device. This is typically a positive voltage and must be limited to a voltage that is equal to or below the specified maximum.

In the case of the IPC60R160C6X1SA1, its maximum gate-source voltage is 20V and its drain-source voltage is rated up to 160V. It has an R_DSon value of 0.0044 Ω and can handle up to 30W of power in the TO-220-2 package.

The IPC60R160C6X1SA1 is an ideal choice for any application that requires high power handling capabilities and low on-resistance. It is also suitable for applications that require fast switching times due to its low gate charge characteristics.

The specific data is subject to PDF, and the above content is for reference

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IPC60R160C6X1SA1-ND

IPC60R160C6X1SA1

Discrete Semiconductor Products

Application Fields

Working Principle