IPC60R099CPX1SA2

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The IPC60R099CPX1SA2 is an industrial grade high power MOSFET intended primarily for power switching, such as motor control and power supplies. Its superior ruggedness, maximum power dissipation and low on-resistance make this MOSFET ideal for a broad range of applications where size and power efficiency are of paramount importance. The power MOSFET has a maximum on-resistance of only 0.0099 Ohms, making it suitable for higher frequency switching as well as for applications with high voltage/high current requirements.

This MOSFET is constructed from a dual die design, where the upper and lower dies are available in different sizes to suit specific operating needs. It is manufactured using the advanced MOSFET fabrication process that provides superior transistor power performance. It uses a p-channel MOSFET gate for maximum current switching, and has a majority carrier tunneling property which reduces gate charge and facilitates fast switching.

The IPC60R099CPX1SA2 is primarily used in motor control and power supply applications, but may also be used in a wide range of automotive, consumer, industrial and medical applications, as well as medical, telecom, and commercial power control applications. It is suitable for high switching frequency and high voltage/high current applications due to its low output resistance and features like a negative temperature coefficient.

The IPC60R099CPX1SA2’s working principle is based on that of a typical MOSFET transistor. It contains a gate, source, and drain; the gate acts as the control input and is used to control the current flow from the source to the drain. When a positive voltage is applied to the gate, it creates an electrical field that attracts charges from the source to the drain. As more charges are attracted, the resistance between the source and drain decreases and current increases. When the voltage applied to the gate is low, the current flow decreases and the resistance between the source and drain increases.

The IPC60R099CPX1SA2 is rated to handle a maximum peak current of 25A and a continuous current of 20A. It has an operating temperature range between -55°C and 150°C, a maximum drain-source breakdown voltage of 500V, and a maximum gate threshold voltage of 600mV. It features an impressive avalanche energy rating of 2.2mJ. It is RoHS compatible and is approved for use in industrial systems and applications.

In summary, the IPC60R099CPX1SA2 is a high power MOSFET suitable for a variety of industrial applications. Its small size, low on-resistance, and fast switching capabilities make it well-suited for motor control, power supply, consumer, automotive and medical applications. Its high efficient power performance and rugged construction, as well as its RoHS compatibility and low voltage/high current characteristics make it an ideal choice for medium to high-power applications.

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