Name: IPC60R099C6UNSAWNX6SA1
Brand: Infineon Technologies
SKU: IPC60R099C6UNSAWNX6SA1-ND
Availability: InStock

IPC60R099C6UNSAWNX6SA1 Allicdata Electronics

Allicdata Part #:	IPC60R099C6UNSAWNX6SA1-ND
Manufacturer Part#:	IPC60R099C6UNSAWNX6SA1
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	Infineon Technologies
Short Description:	MOSFET N-CH BARE DIE
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DataSheet:	IPC60R099C6UNSAWNX6SA1 Datasheet/PDF
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Specifications

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Part Status:	Last Time Buy

Description

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The IPC60R099C6UNSAWNX6SA1 is a single metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Infineon Technologies AG. It is a N-channel MOSFET designed for high-power switching and linear applications. These devices are used for a range of applications, such as power switches, power supply circuits, motor control, and as a general-purpose switching device.

The IPC60R099C6UNSAWNX6SA1 is a N-channel, enhancement type transistor in a TO-220AB package. It consists of an insulated gate, a controlling terminal that can be used to modulate the current flow between the source and the drain of the device. These MOSFETs are designed for a wide range of power switching and linear applications, and can be operated within a current range of −0.8A to +25A.

The IPC60R099C6UNSAWNX6SA1 is designed for switching and linear applications. It can be used to control currents up to 25 amps and can handle voltages up to 600 volts. It has an on-state resistance of 0.99 Ohms and a total gate charge of 18.8 nC. The device has a maximum junction temperature of 150°C. It has low gate threshold voltage and supports a wide input voltage range.

The IPC60R099C6UNSAWNX6SA1 device has a fast switching speed, high current carrying capability, and low on-state resistance. It is ideal for power switching applications and motor control applications. This device is also suitable for AC and DC power supplies, power converters, and Class-D amplifiers.

The working principle of the IPC60R099C6UNSAWNX6SA1 is based on the MOSFET switching principle. The MOSFET is controlled by a voltage applied to the gate. When no voltage is applied, the MOSFET is in the off state and there is no current flowing between source and drain. When a voltage is applied to the gate, the current starts to flow from source to drain, and the MOSFET is in the on-state. The current is then able to flow until the voltage applied to the gate is removed.

The IPC60R099C6UNSAWNX6SA1 is an ideal solution for high-power switching and linear applications. It has an on-state resistance of 0.99 Ohms, a total gate charge of 18.8 nC, and a maximum junction temperature of 150°C. This device has fast switching speed, high current carrying capability, and low on-state resistance, which makes it ideal for power switching and motor control applications. It can also be used in power supplies, power converters, and Class-D amplifiers.

The specific data is subject to PDF, and the above content is for reference

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IPC60R099C6UNSAWNX6SA1-ND

IPC60R099C6UNSAWNX6SA1

Discrete Semiconductor Products