IPC60N04S4L06ATMA1

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The IPC60N04S4L06ATMA1 is a single N-channel advanced trench MOSFET designed for Switch-mode power supplies, DC-DC converters, buck/boost converters, general purpose switches and many other applications. It features low on-resistance and sensible gate charge with reasonable gate and avalanche voltage ratings. This helps keep power losses low and switching transitions fast. The device is especially suited for portable applications including notebook PC’s, mobile phones and telecommunication systems.

It is based on IPC60N04S4L06ATMA1’s latest advanced trench MOSFET technology that optimizes the on-resistance and threshold voltage. This makes it possible to produce smaller devices without compromising performance. The device family is offered with various voltage and current levels to perfect custom power needs with an optimally sized package.

The IPC60N04S4L06ATMA1 is a N-channel MOSFET with structure optimized for low on-resistance, high dV/dt, fast switching and moderate gate charge condition. It is constructed with an advanced trench technology and the chip of the transistor is with Asymmetric Pryamidal Structure to utilize a thin silicon layer of 6μm. It is housed in a TSOP-6 package.

The IPC60N04S4L06ATMA1’s core principle of operation is based on MOSFET technology. This type of transistor switch is made up of an input gate and a drain terminal. When an electric charge is sent to the gate terminal, it creates an electric field that attracts the electrons in the drain terminal. This creates conduction between the two terminals and the MOSFET switch is turned on. If a negative electric charge is sent to the gate terminal, the electric field created is repelled by the electrons, thereby turning the MOSFET switch off.

The IPC60N04S4L06ATMA1 is able to handle up to 40 volts of drain-source voltage, a continuous current rating of 4.0A and a maximum power dissipation of 600mW. The device features low on-resistance ratings starting at 1.3 milliohms, an output capacitance rating of 71pF and a gate charge of 4.7nC. It has an operating temperature range of -55°C to 150°C.

The IPC60N04S4L06ATMA1 is suitable for a wide range of applications that includes DC/DC conversion, synchronous rectification, switching mode power supplies (SMPS), audio amplifiers, battery management, motor drives, power factor correction and automotive systems. It is ideal for applications such as SFC boost, battery charge/discharge, weight scale and power management.

The IPC60N04S4L06ATMA1 offers performance advantages over other MOSFETs including low turn-on and turn-off times, fast switching and good tolerance to voltage spikes. It is an ideal MOSFET switch component for a wide range of industrial, commercial and consumer applications. The device is an efficient and cost-effective solution for customers looking for top performance in a small package.

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