IPC60R950C6X1SA1

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A Field-effect transistor (FET), also known as an unipolar transistor, is a type of transistor most commonly used in electronic devices. FETs are designed to be operated as switches having on, off and linear regions of operation. The IPC60R950C6X1SA1 uses the latest in FET technology to offer high performance and low power.

What is IPC60R950C6X1SA1? IPC60R950C6X1SA1 is the latest FET device developed by Samsung Electronics. It is a single, vertical channel MOSFET, manufactured using advanced Trench+6 process technology to provide superior power performance and thermal handling characteristics. It is designed for use in a wide range of SMPS applications, and is capable of handling an operating temperature up to 175°C.

Application Fields

• Audio power amplifiers
• DC-DC Converters and Inverters
• Home Appliances
• Motor Control
• Battery Chargers
• Digital Processors and Controllers

Features

• High voltage and high current ratings
• Low on-resistance
• Low gate leakage current
• High di/dt for fast switching capability
• High surge current capability
• High frequency operation up to 100kHz

Working Principle

The working of a FET is based on the principle of capacitance. The gate region of the FET consists of two metal electrodes separated by an insulating layer known as the gate oxide. When high voltage is applied to the gate electrode, a capacitive electric field is established across the gate oxide and the two electrodes. This electric field has the effect of altering the charge distribution on the two electrodes, resulting in a shift in the threshold voltage of the FET. This means that by controlling the voltage applied to the gate, the FET can be switched between the on, off and linear regions of operation.

A single channel MOSFET like the IPC60R950C6X1SA1 is characterized by a single metal-oxide-semiconductor layer, making for a simpler device structure than a multi-channel MOSFET. This single layer makes it advantageous for high voltage applications and its relatively low power dissipation makes it suitable for a wide range of power management solutions.

The IPC60R950C6X1SA1 is designed to provide superb performance and power efficiency. Its high voltage and current ratings make it ideal for SMPS applications, and it also has a low on-resistance and low gate leakage current which is advantageous for power management applications. The device is capable of handling an operating temperature up to 175°C, and its high di/dt and high surge current capabilities make it suitable for high frequency operation up to 100kHz.

In summary, the IPC60R950C6X1SA1 is a single, vertical channel MOSFET that is perfectly suited for SMPS applications. Its high voltage and current ratings, low on-resistance and low gate leakage current, high di/dt, and high surge current capabilities make it an ideal choice for a wide range of power management solutions.

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