IPC65R070C6X1SA1 Allicdata Electronics
Allicdata Part #:

IPC65R070C6X1SA1-ND

Manufacturer Part#:

IPC65R070C6X1SA1

Price: $ 3.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH BARE DIE
More Detail:
DataSheet: IPC65R070C6X1SA1 datasheetIPC65R070C6X1SA1 Datasheet/PDF
Quantity: 1000
2826 +: $ 3.57734
Stock 1000Can Ship Immediately
$ 3.98
Specifications
Series: *
Part Status: Active
Description

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IPC65R070C6X1SA1 is the commonly used abbreviation for an insulated gate bipolar transistor (IGBT). This type of power transistor is designed for applications requiring high performance, low input voltages, and high power handling. IGBTs are very common in power electronics as they are used in high power applications such as motor drives, uninterruptible power supplies, solar inverters, and battery management systems. They are especially beneficial in applications requiring a very low on-state resistance.

This IGBT module is well known for its excellent performance in a variety of high power applications. It offers an excellent switching performance and low input voltage, making it ideal for a wide range of applications. The module has a robust design with integrated gate protection, and it can handle high currents and voltage levels. Additionally, the module features a low on-state resistance, making it very efficient in power applications.

The main application of the IPC65R070C6X1SA1 module is in motor drives, uninterruptible power supplies, and solar inverters. This is because the module offers fast switching time and low input voltage, making it ideal for motor control applications. In applications such as motor drives and uninterruptible power supplies, the IGBT module can help to ensure stable power supply thanks to its low on-state resistance and high power handling capability. It is also used in solar inverters in order to provide more efficient and reliable power.

The working principle of an IGBT is quite similar to a MOSFET, but it has an additional gate that allows for higher levels of power handling. IGBTs use two separate transistors, one in the gate and one in the substrate. This allows for higher levels of current and voltage handling capability. The gate of the IGBT is a low-power transistor, while the substrate is a higher power transistor. When a current is applied to the gate, this triggers the high-power transistor in the substrate to allow current to flow. This allows for higher levels of power handling and low input voltage to be used.

In summary, the IPC65R070C6X1SA1 module is an insulated gate bipolar transistor designed for a variety of high power applications including motor drives, uninterruptible power supplies, and solar inverters. This module is well known for its excellent switching performance and low input voltage, making it ideal for high power applications. The main application is in motor drives and uninterruptible power supplies due to its low on-state resistance and high power handling capability. Furthermore, it has a similar working principle to a MOSFET, as it uses two transistors and allows for higher levels of power handling.

The specific data is subject to PDF, and the above content is for reference

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