Name: IPC60R380E6UNSAWNX6SA1
Brand: Infineon Technologies
SKU: IPC60R380E6UNSAWNX6SA1-ND
Availability: InStock

IPC60R380E6UNSAWNX6SA1 Allicdata Electronics

Allicdata Part #:	IPC60R380E6UNSAWNX6SA1-ND
Manufacturer Part#:	IPC60R380E6UNSAWNX6SA1
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	Infineon Technologies
Short Description:	MOSFET N-CH BARE DIE
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DataSheet:	IPC60R380E6UNSAWNX6SA1 Datasheet/PDF
Quantity:	1000

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Specifications

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Part Status:	Last Time Buy

Description

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The IPC60R380E6UNSAWNX6SA1 is a type of single field-effect transistor (FET) specifically designed for high voltage operations and with low gate charge characteristics. The device is offered in a compact Thermally Enhanced Package (TEP) and is suitable for applications such as high voltage power supply control, plasma display panel control, and lighting control.

The IPC60R380E6UNSAWNX6SA1 is an n-channel enhancement mode FET with a maximum drain-source voltage of 600V. It has an optimized gate structure that minimizes the device charging time while providing a low on-resistance. The maximum Continuous Drain Current (ID) is 19A. It has a maximum operating temperature of +175°C and a maximum on-state resistance of 0.07 ohms.

The device offers several advantages when compared to its counterparts. First, it offers very low gate charge for faster charging times. This helps decrease switching or filling time, allowing for greater efficiency in applications requiring higher power loads. In addition, the device has a relatively low internal gate resistance of 3.1kohms, which helps reduce power loss during operation.

The IPC60R380E6UNSAWNX6SA1 has a simple operating principle. When sufficient gate voltage is applied, the n-channel FET will turn on and drain current flows. This increases the device\'s drain-source voltage, which, in turn, increases the gate-source voltage. This increased voltage further enhances the FET\'s on-resistance and provides current flow. The device will remain on until the applied gate voltage is reduced.

The IPC60R380E6UNSAWNX6SA1 provides high power efficiency, low gate charge, and a high maximum drain-source voltage. It is suitable for use in applications like high voltage power supply control, plasma display panel control, and lighting control. In addition, the device offers high thermal resistance for better heat dissipation and lower junction temperatures. It is the perfect choice for high power applications that require a fast switching time.

The specific data is subject to PDF, and the above content is for reference

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IPC60R380E6UNSAWNX6SA1-ND

IPC60R380E6UNSAWNX6SA1

Discrete Semiconductor Products