IPC60R160C6UNSAWNX6SA1 Allicdata Electronics
Allicdata Part #:

IPC60R160C6UNSAWNX6SA1-ND

Manufacturer Part#:

IPC60R160C6UNSAWNX6SA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH BARE DIE
More Detail:
DataSheet: IPC60R160C6UNSAWNX6SA1 datasheetIPC60R160C6UNSAWNX6SA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
Description

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The IPC60R160C6UNSAWNX6SA1 is a single N-channel enhancement-mode HEXFET MOSFET transistor from International Rectifier. It has excellent features and characteristics, making it suitable for a wide range of applications.This MOSFET is based on a vertical DMOS technology which offers a small package, high speed, low power consumption, and superior protection. Its ultimate goal is to provide superior performance over the traditional transistor and FET technologies.The IPC60R160C6UNSAWNX6SA1 is typically used in power switching applications such as power hold-up, over-current protection, load switching, and inrush current limit applications. Its package is designed for easy implementation in automatic assembly processes and its high voltage rating ensures that it can be used in the most demanding applications.The IPC60R160C6UNSAWNX6SA1 is a single N-channel enhancement-mode power MOSFET. The device utilizes the HEXFET technology which offers excellent efficiency, power dissipation, and transconductance. This MOSFET is also very reliable, making it suitable for demanding applications. The IPC60R160C6UNSAWNX6SA1 is typically used in applications where high speed is required. The device is capable of switching frequencies up to 1A/us and can handle load currents up to 11A. It also has a high voltage handling capability of up to 80V, allowing it to be used in various applications such as motor control, LED lighting, power supply, etc.The IPC60R160C6UNSAWNX6SA1 working principle involves the flow of current through the MOSFET. When a voltage is applied to the gate terminal, a depletion zone is formed around the semiconductor channel. This depletion zone creates an insulated barrier between the gate terminal and the drain terminal, thus blocking the flow of current between the two terminals. When the gate voltage approaches the threshold voltage, the depletion zone breaks down, allowing the flow of current. As a result, the IPC60R160C6UNSAWNX6SA1 is able to maintain a linear current flow with minimal losses. This makes it very efficient in applications where low power consumption and high efficiency are desired. The IPC60R160C6UNSAWNX6SA1 is a great choice for those who are looking for an efficient, reliable and cost effective solution for their power switching needs. Its combination of high speed, low power consumption and high voltage handling capability make it suitable for a wide range of applications.

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