IPC60R280E6UNSAWNX6SA1

Series:	--
Part Status:	Last Time Buy

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Introduction

IPC60R280E6UNSAWNX6SA1 is a single-P-channel enhancement mode Field Effect Transistor (FET) with an integrated Schottky diode. It is one of the most widely used FETs as it is designed to operate in a wide range of applications, including audio, power control, amplifiers and switching circuits. This article will discuss the applications and working principle of IPC60R280E6UNSAWNX6SA1.

Applications

IPC60R280E6UNSAWNX6SA1 is used in a variety of applications, due to its high-frequency, low on-resistance, and high breakdown voltage capabilities. Firstly, it is used for audio applications, as it is capable of handling high power levels. Its high-frequency capabilities allow it to accurately reproduce high-pitched sounds, and its low on-resistance ensures minimal distortion and noise.Secondly, IPC60R280E6UNSAWNX6SA1 can also be used for switching applications. Its low on-resistance ensures minimal power dissipation and heat generation, which make it ideal for use in applications requiring fast switching speeds. Its low on-state gate charge also allows for faster switching.Thirdly, IPC60R280E6UNSAWNX6SA1 is used for power control applications. Its high breakdown voltage makes it ideal for use in high power applications. Its low on-resistance makes it highly efficient, making it ideal for use in battery powered devices such as mobile phones.Finally, IPC60R280E6UNSAWNX6SA1 is also used for amplifiers, due to its high-frequency and low on-resistance capabilities. Its low on-resistance ensures minimal power dissipation and heat generation, while its high-frequency capabilities allow it to accurately reproduce higher frequency signals.

Working Principle

IPC60R280E6UNSAWNX6SA1 is a field-effect transistor and is designed to operate in an enhancement mode. An enhancement mode FET is a transistor where the current flow between the source and drain is controlled by the voltage on the gate terminal. In a P-channel transistor, the source and drain are in the same direction as the voltage applied to the gate. When no voltage is applied to the gate, the transistor is in an off state, and no current flows. When a voltage is applied to the gate, the transistor is in an on state, and the current between the source and drain increases.The Schottky diode incorporated into the IPC60R280E6UNSAWNX6SA1 compensates for the voltage drop across the transistor when it is in an on-state. This ensures that the transistor does not turn off when the voltage applied to the gate is below the threshold voltage.

Conclusion

IPC60R280E6UNSAWNX6SA1 is a single-P-channel enhancement mode Field Effect Transistor (FET) designed to operate in a wide range of applications. It is capable of handling high power levels, high-frequency signals, and has a low on-resistance, making it suitable for use in a variety of different applications. Additionally, the integrated Schottky diode compensates for the voltage drop across the transistor when it is in an on-state.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description