IPW60R125P6XKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R125P6XKSA1-ND

Manufacturer Part#:

IPW60R125P6XKSA1

Price: $ 3.66
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO247-3
More Detail: N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-...
DataSheet: IPW60R125P6XKSA1 datasheetIPW60R125P6XKSA1 Datasheet/PDF
Quantity: 130
1 +: $ 3.32640
10 +: $ 2.96856
240 +: $ 2.43443
720 +: $ 1.97130
1200 +: $ 1.66254
Stock 130Can Ship Immediately
$ 3.66
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 219W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPW60R125P6XKSA1 is a type of Field-Effect Transistor (FET) manufactured by Infineon Technologies AG. It is a depletion-mode, N-channel MOSFET (D-MOSFET) designed for power management applications. This article will discuss its application field, how it works, and the benefits it provides.

Application Field

The IPW60R125P6XKSA1 offers enhanced RDS-ON performance and an improved drain-source resistance of 60mΩ. This makes it ideal for general-purpose applications where power management is involved. Examples of such applications include motor control, inverters, power supplies, DC–DC converters, and automotive systems, such as in fuel pumps, ABS systems, and electrics.

Working Principle

As an N-channel MOSFET, the IPW60R125P6XKSA1 operates on the principles of the MOS capacitor. It enables the device to move electrons in either direction, depending on the state of the gate voltage. When the gate voltage is low, the source and drain are connected, allowing the current to flow. When the gate voltage is high, the source and drain are disconnected, preventing the current from passing through.

The IPW60R125P6XKSA1 is specially designed to withstand large voltage spikes. It can handle up to 600 volts, making it ideal for applications that require high-voltage switching. This high breakdown voltage makes it ideal for motor control and power management.

Advantages

The IPW60R125P6XKSA1 offers many advantages over traditional MOSFETs. Firstly, its small package size (2.2 mm x 2.2 mm) makes it ideal for space-constrained applications. Secondly, it features a low on-state resistance, which helps to reduce the power consumption of the system. Finally, the device has a fast switching speed of up to 10ns, which makes it suitable for high-frequency applications.

Furthermore, the IPW60R125P6XKSA1 is RoHS compliant and meets ESD protection levels IEC 61000-4-2 (ESD, Level 4) and IEC 61000-4-4 (EFT, Level 4). This makes it ideal for a wide range of industrial and automotive applications.

Conclusion

The IPW60R125P6XKSA1 provides enhanced RDS-ON performance and an improved drain-source resistance of 60mΩ. It is an excellent choice for power management applications, such as motor control, inverters, and DC–DC converters. Thanks to its small package size and fast switching speed, it is suitable for space-constrained and high-frequency applications. Moreover, its RoHS compliance and ESD protection levels make it ideal for industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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