IPW60R190P6FKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R190P6FKSA1-ND

Manufacturer Part#:

IPW60R190P6FKSA1

Price: $ 2.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 20.2A TO247
More Detail: N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole P...
DataSheet: IPW60R190P6FKSA1 datasheetIPW60R190P6FKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.21130
10 +: $ 1.97190
240 +: $ 1.61682
720 +: $ 1.30923
1200 +: $ 1.10417
Stock 1000Can Ship Immediately
$ 2.43
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 151W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPW60R190P6FKSA1 is a P Type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. It is a n-channel enhancement mode device with a very low on-resistance of 0.19 Ohms that can be used for applications such as electrical current sensing, motor control, load switching, and power management. It can handle an operating voltage of up to 20V and a drain-source current of up to 60A.

Applications

The IPW60R190P6FKSA1 can be used in a variety of applications due to its low on-resistance, high current capability, and low voltage operation. It can be used for motor and load control, in motor drive circuits, for line protection and current limiting, as well as for power management systems. It can also be used for power supplies, inverters, motor controllers, and for instrumentation and telemetry systems.

Working Principle

The IPW60R190P6FKSA1 is a P type MOSFET, which means that the majority carrier is holes, rather than electrons like it is in an N type MOSFET. The IPW60R190P6FKSA1 works by allowing current to flow between the source and drain terminals when a voltage is applied to the gate terminal. When a voltage is applied to the gate terminal, the transistor will enter its saturation region and current will flow freely between the source and drain. This is due to the P type MOSFET\'s behavior when a positive voltage is applied to its gate terminal, which causes electrons to be repelled from the channel, leaving behind holes that can conduct current. When the voltage is removed from the gate terminal, the electrons in the channel will repopulate it and the transistor will not be able to conduct current anymore.

Conclusion

In conclusion, the Infineon IPW60R190P6FKSA1 is a P type MOSFET that can be used for a variety of applications due to its low on-resistance, high current capability, and low voltage operation. It works by allowing current to flow between its source and drain terminals when a voltage is applied to its gate terminal, after which it will enter its saturation region. This allows it to be used in applications such as motor and load control, in motor drive circuits, line protection and current limiting, as well as power management systems.

The specific data is subject to PDF, and the above content is for reference

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