Allicdata Part #: | IPW60R099C6FKSA1-ND |
Manufacturer Part#: |
IPW60R099C6FKSA1 |
Price: | $ 5.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 37.9A TO247 |
More Detail: | N-Channel 600V 37.9A (Tc) 278W (Tc) Through Hole P... |
DataSheet: | IPW60R099C6FKSA1 Datasheet/PDF |
Quantity: | 3 |
1 +: | $ 4.66200 |
10 +: | $ 4.19454 |
240 +: | $ 3.44865 |
720 +: | $ 2.88942 |
1200 +: | $ 2.51658 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.21mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 119nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 18.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 37.9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The IPW60R099C6FKSA1 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by International Rectifier. It is commonly used in a wide variety of applications from automotive to industrial, and has become a popular choice for engineers who require dependable power. This article will discuss the IPW60R099C6FKSA1\'s application fields and working principle.
Application Field
The IPW60R099C6FKSA1 is mainly used in the automotive and industrial sectors. As a result, the MOSFET is designed to be highly robust and reliable. This is especially important in automotive and industrial applications, where the MOSFET is used to control significant amounts of energy (such as motor control). In these cases, a reliable MOSFET is absolutely essential to ensure the safety of both people and machines.
The IPW60R099C6FKSA1 is also popular for a variety of other applications due to the nature of its design. Despite being a single-channel MOSFET, the device still offers a high degree of flexibility when it comes to controlling power. This makes it ideal for a wide range of applications, from AC/DC converters to motor drives. Furthermore, the device offers numerous advantages over other types of MOSFETs, such as low power consumption and superior temperature management.
Working Principle
The IPW60R099C6FKSA1 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), which utilizes the principle of the electric field to control the flow of electrons. This allows it to act as a switch that can be used to control the flow of electric current. It operates on the principle that an electric field is established when a voltage is applied across the gate and source terminals. This causes electrons to be attracted to the gate, thus creating a conductive channel between the source and drain.
The IPW60R099C6FKSA1 can be used in either enhancement or depletion mode. In enhancement mode, an external voltage is applied to the gate terminal and the MOSFET will turn on allowing current to flow between the source and drain. In depletion mode, the applied external voltage is inverted, causing the channel to become blocked, thereby preventing current from flowing between the source and drain.
In addition to providing its switching capabilities, the MOSFET also offers numerous other benefits over alternate types of transistors. For example, it is often used to control highly sensitive current flows, such as those in medical applications. Furthermore, the device is capable of operating at either high or low voltages, making it suitable for use in a variety of different applications.
Conclusion
The IPW60R099C6FKSA1 is a single N-Channel MOSFET that is often used in a variety of applications, most notably in the automotive and industrial sectors. The device operates on the principle that an electric field is established when a voltage is applied across the gate and source terminals. This causes electrons to be attracted to the gate, creating a conductive channel between the source and drain. The MOSFET is capable of operating in either enhancement or depletion mode, thus allowing it to be used to control the flow of current effectively.
The specific data is subject to PDF, and the above content is for reference
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