IPW60R045CPAFKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R045CPAFKSA1-ND

Manufacturer Part#:

IPW60R045CPAFKSA1

Price: $ 10.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 60A TO-247
More Detail: N-Channel 600V 60A (Tc) 431W (Tc) Through Hole PG-...
DataSheet: IPW60R045CPAFKSA1 datasheetIPW60R045CPAFKSA1 Datasheet/PDF
Quantity: 1000
240 +: $ 9.67435
Stock 1000Can Ship Immediately
$ 10.65
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 431W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: Automotive, AEC-Q101, CoolMOS™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPW60R045CPAFKSA1 is a type of power MOSFET from Infineon, being of the majority-carrier-controlled channel type. Though not one of the most powerful FETs available, the IPW60R045CPAFKSA1 is designed for applications with a variety of advantages. 

A Field-Effect Transistor is a type of transistor which uses an electric field to control the conductivity of a semiconductor. They are less bulky than their predecessor, the bipolar junction transistor, and can be more easily integrated into circuits. In the case of the IPW60R045CPAFKSA1, the transistor is of the MOSFET type, meaning that it further reduces power requirements by converting the source-drain current into a conduction band known as the "channel".

MOSFETs come in either N or P types, depending on the polarity of the gate-drain and gate-source connections. In the case of the IPW60R045CPAFKSA1, it is an N-type, meaning the current flows between the source and drain connections in the same direction as the gate current. This allows for greater control over the output current, since the gate voltage covers more of the global voltage drop.

Single-gate MOSFETs such as the IPW60R045CPAFKSA1 are well-suited for applications requiring high-density circuitry, due to their very low on-resistance. The low on-resistance has the added advantage of reducing gate leakage current, thereby improving overall circuit efficiency. 

The IPW60R045CPAFKSA1 is designed for a wide range of applications, thanks in part to its adjustable source-drain-voltage rating. It is particularly well-suited for low-voltage DC motors and power converters. It is also suitable for AC loads, as long as it stays within its current range. In addition, the FET is suitable for power conditioning, motor drive and switching applications, as well as a variety of general purpose applications.

The IPW60R045CPAFKSA1\'s working principle is based on the fact that it functions as a variable resistor between the source and drain. The gate voltage determines the resistance; the higher the voltage, the lower the resistance. This allows the user to control the current flow between the source and drain, which in turn can be used to adjust the power output. The output is also affected by the supply voltage and the load current.

The IPW60R045CPAFKSA1 is built to be an efficient, cost-effective solution for a wide range of applications. Its adjustable gate voltage allows for greater control over the circuit\'s output, while its low on-resistance reduces gate leakage current, making it an ideal choice for high-density circuitry. Its adjustable source-drain-voltage rating allows for AC loads, making it suitable for a variety of applications, from motor drives to power converters.

The specific data is subject to PDF, and the above content is for reference

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