IPW60R199CPFKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R199CPFKSA1-ND

Manufacturer Part#:

IPW60R199CPFKSA1

Price: $ 3.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 16A TO-247
More Detail: N-Channel 600V 16A (Tc) 139W (Tc) Through Hole PG-...
DataSheet: IPW60R199CPFKSA1 datasheetIPW60R199CPFKSA1 Datasheet/PDF
Quantity: 1000
240 +: $ 2.81565
Stock 1000Can Ship Immediately
$ 3.13
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPW60R199CPFKSA1 is a single transistor, also known as a field effect transistor (FET). FETs are active electronic components which act as tiny switches allowing a small current or voltage to control a larger current or voltage within a circuit. FETs works through a voltage-controlled current flow, allowing for small changes in voltage to control large power flows in a circuit. A FET is made up of two semiconductors, which make up the source and the drain. The source is the negatively charged semiconductor, while the drain is the positively charged one. As its name implies, the gate of the FET is a physical gate located between the source and the drain which controls the flow of current in the circuit. It is normally on or off, with a slight voltage applied across it to control whether the current flows or not.

The IPW60R199CPFKSA1 is a single transistor that can be used for both low power applications and high power applications. In low power applications, the FET can be used to control a current between two low voltage levels. This is done by using the source and drain as the two terminals, and using the gate to control the current flow. In this application, the FET acts as an amplifier, controlling the current flow between two low voltage levels. For high power applications, the FET can act as a switch, controlling the current flow between two high voltage levels. To do this, the FET is connected in parallel with a power supply, and can switch between two high voltage levels by adjusting the voltage at the gate.

The IPW60R199CPFKSA1 also has a wide range of possible applications. It can be used to control signal levels in power supplies, as well as to control power switches in consumer electronics. Additionally, it can be used to control current flow in motor drives, where it can switch between two high voltage levels quickly and accurately. The FET can also be used in applications such as audio circuitry, allowing for precise control of signal levels.

The IPW60R199CPFKSA1 also features a high level of protection against current surges - something that is vital in applications such as motor drive, where large current surges can quickly damage the device. This protection is provided through several layers of protection, including transistors, diodes, and a polysilicon gate oxide. These layers can protect the device from high voltages and currents, ensuring the device is reliable and long-lasting.

Overall, the IPW60R199CPFKSA1 is a highly versatile single transistor. Its high degree of protection and wide range of possible applications make it ideal for both low power and high power applications. With its high level of performance and reliability, the IPW60R199CPFKSA1 is an excellent choice for a wide range of circuits, providing precision control and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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