IPW60R280P6FKSA1

Vgs(th) (Max) @ Id:	4.5V @ 430µA
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1190pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25.5nC @ 10V
Series:	CoolMOS™ P6
Rds On (Max) @ Id, Vgs:	280 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13.8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>IPW60R280P6FKSA1 is a single FET power transistor with a very wide range of application fields. It can be used in a variety of power related applications including power supply, voltage regulator, lighting regulator, and motor controller. It is a very versatile device that can be used in a number of different situations to control the flow of power.</p><p>The IPW60R280P6FKSA1 is an N-channel power MOSFET that has an on-state resistance of 60 ohms. This is a good transistor for use in applications that require good switching performance and high levels of power dissipation. It has a very low gate drive voltage, low on-resistance, and low gate-source capacitance, making it ideal for power applications.</p><p>The high breakdown voltage of this transistor also makes it useful for applications that require high voltage performance. The device has a maximum drain-source voltage of 280V and a maximum drain current of 60A. This is high enough to handle power up to 16.5 kW, making it well suited for a number of automotive, industrial, and commercial applications. </p><p>The working principle of the IPW60R280P6FKSA1 is very straightforward. When a voltage is applied to the gate terminal, current flows from the source to the drain, passing through the transistor. The current is controlled by adjusting the gate voltage, which controls the depletion layer width.</p><p>The gate voltage also affects the device’s on-state resistance, which can be adjusted to suit a particular application. When the gate voltage is decreased, the depletion width in the device increases and the resistance decreases. Conversely, when the gate voltage is increased, the depletion width decreases and the resistance increases.</p><p>The IPW60R280P6FKSA1 is a great choice for designing cost-effective power solutions. Its low cost and versatile operational parameters make it ideal for a variety of applications in consumer electronics, industrial, and automotive applications. </p>

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