IPW60R080P7XKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R080P7XKSA1-ND

Manufacturer Part#:

IPW60R080P7XKSA1

Price: $ 5.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 37A TO247-3
More Detail: N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-...
DataSheet: IPW60R080P7XKSA1 datasheetIPW60R080P7XKSA1 Datasheet/PDF
Quantity: 120
1 +: $ 4.54860
10 +: $ 4.06035
240 +: $ 3.32928
720 +: $ 2.69590
1200 +: $ 2.27366
Stock 120Can Ship Immediately
$ 5.01
Specifications
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 129W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 400V
Vgs (Max): ±20V
Series: CoolMOS™ P7
Vgs(th) (Max) @ Id: 4V @ 590µA
Rds On (Max) @ Id, Vgs: 80 mOhm @ 11.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The IPW60R080P7XKSA1 is an insulated-gate field-effect transistor (IGFET) or a metal-oxide-field-effect transistor (MOSFET). It is an enhancement-mode power MOSFET that can be used as a switch, amplifier or voltage-controlled element. The device features low on-state resistance as well as high peak and average drain current ratings, making it suitable for use in power-switching applications such as AC-DC converters and power amplifiers. As a voltage-controlled transistor, the device can be used to convert low-level signals into current or usable power. With its low on-state resistance and its wide safe operating area, the IPW60R080P7XKSA1 is suitable for use in applications such as power converters, power amplifiers, and motor or drive control.

The IPW60R080P7XKSA1 is a P-channel MOSFET that can be used as a switch or as a voltage-controlled element. It features a drain current rating of 60A and a maximum drain-source voltage of 800V. The device is rated to handle continuous drain currents of up to 30A with a drain-source voltage of 150V. As a transistor, the device can be used to control current or voltage in motors, solenoids, lamps, sensors and other applications requiring precise current or voltage control. Its high peak and average drain current ratings make the IPW60R080P7XKSA1 suitable for use in high power switching applications such as AC-DC converters and power amplifiers.

The IPW60R080P7XKSA1 is a three-terminal device with a source, gate, and drain. The source is connected to the negative power line and acts as a reference voltage for the device. The gate is connected to the input signal, and is used to control the device on or off. By applying a voltage to the gate, the device can be turned on or off. When the device is in the off state, no current is passed through the device. When the device is in the on state, current flows from the source to the drain. This is often referred to as the drain-source voltage (VDS).

As an enhancement-mode device, the IPW60R080P7XKSA1 requires a gate voltage to turn the device on. When a positive voltage is applied to the gate, the device is turned on and the current will flow from the drain to the source. When the gate voltage is negative, the device is turned off and no current will flow. The device can also be used as an oscillator to generate an AC signal, as the voltage on the gate can be cycled between positive and negative to generate an oscillating current.

The IPW60R080P7XKSA1 is a versatile device that can be used in a number of different applications. As a switch, it can be used to control the flow of current in a variety of circuits, while as a voltage-controlled element, it can be used to convert low-level signals into usable power. With its low on-state resistance and its wide safe operating area, the IPW60R080P7XKSA1 is suitable for use in power-switching applications such as AC-DC converters, motor or drive control, and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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