IPW60R230P6FKSA1

Vgs(th) (Max) @ Id:	4.5V @ 530µA
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	126W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1450pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	CoolMOS™ P6
Rds On (Max) @ Id, Vgs:	230 mOhm @ 6.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16.8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPW60R230P6FKSA1 is a kind of single N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . It is a kind of semiconductor that has electrical properties of both metallic and insulating material. This MOSFET can effectively operate as a switch, and can quickly switch on and off with no effort.The IPW60R230P6FKSA1 MOSFET is made up of three layers: source, drain and gate. The Source is the origin of electrons which move through the drain. This electrical current must pass through the gate, which is made up of an insulation material, before it reaches the drain and the Source. The gate contains an electrode that has the ability to control and switch the current on and off.The source, drain and gate are typically made up of polycrystalline silicon, which is a material used for forming the structure of integrated circuits. This polycrystalline silicon is then covered with a thin layer of insulator such as silicon dioxide or oxynitride layer. This layer protects the materials from damage and provides insulation.The MOSFET works by controlling the flow of electrons from the source to the drain through a gate. When the gate is closed, no current flows and the MOSFET is said to be in OFF state. When the gate is opened, the current flows and the MOSFET is said to be in ON state.The IPW60R230P6FKSA1 MOSFET is specifically designed for high voltage, high current (HVC) applications such as switch-mode power supplies and motor control circuits. It has an extremely low ON resistance which makes it ideal for high power applications. In addition, the low gate capacitance makes it ideal for switching at high frequencies (up to 30Mhz).The IPW60R230P6FKSA1 MOSFET has a breakdown voltage of 600 Volts and a maximum current rating of 230 Amps. Due to its high power rating and low ON resistance, the IPW60R230P6FKSA1 MOSFET is an ideal choice for power circuits which require efficient and reliable operation.The IPW60R230P6FKSA1 can be used to build power amplifiers, voltage converters, power switches, motor controllers, motor speed controllers, motor drives and other power control circuits. It is also used in audio and video applications due to its high current capabilities and low power dissipation.In summary, the IPW60R230P6FKSA1 MOSFET is an excellent component for high voltage, high current applications. It has a high breakdown voltage, low resistance and high current rating. It can be used for a wide range of applications such as power amplifiers, voltage converters, power switches, motor controllers and other power control circuits.

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