| Allicdata Part #: | IRF2807SPBF-ND |
| Manufacturer Part#: |
IRF2807SPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 82A D2PAK |
| More Detail: | N-Channel 75V 82A (Tc) 230W (Tc) Surface Mount D2P... |
| DataSheet: | IRF2807SPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 230W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3820pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 43A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF2807SPBF is a vertical N-Channel TopFET, a member of the PowerTrench Mosfet family from International Rectifier, a part of Infineon Technologies. It is specifically designed to deliver maximum current switching and withstand high power losses, making it suitable for several power management applications. This article will discuss the application fields of IRF2807SPBF, as well as its working principle.
Applications
The IRF2807SPBF has been designed to meet the needs of high frequency & high power applications. It is widely used in a range of applications such as DC-DC converters, power supplies, frequency converters, solar power inverters, automotive and lighting applications. The IRF2807SPBF is especially suitable for these applications because it can deliver maximum current switching and withstand high power losses.
Working Principle
The IRF2807SPBF is a vertical N-Channel TopFET, which means it contains two main components - a drain and a control gate. When the voltage at the control gate is increased, the current flowing through the drain is increased, which is a process known as "enhanced Mode". This means that the device can provide higher current switching and efficient power dissipation.
The IRF2807SPBF features low thermal resistance, making it suitable for high power applications. Additionally, it has a low gate charge and a fast switching speed, meaning it can provide fast and reliable switching.
In terms of its on-state resistance (RDS(ON)), the IRF2807SPBF has a low resistance value of 0.45Ω, making it suitable for applications with high power requirements. Additionally, it has a low Gate-Source threshold voltage, which is essential for efficient power dissipation.
The IRF2807SPBF is suitable for a wide range of applications due to its combination of fast switching speed, efficient power dissipation and low on-state resistance. It can also operate over a wide range of temperatures, making it a reliable device for high power and high frequency applications.
Conclusion
In conclusion, the IRF2807SPBF is a versatile device that can be used for a range of power management applications. It features high current switching, efficient power dissipation and low on-state resistance, making it ideal for high frequency and high power applications. As such, the IRF2807SPBF is well-suited for DC-DC converters, power supplies, solar power inverters, frequency converters, automotive and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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IRF2807SPBF Datasheet/PDF