IRF2804STRL7PP Discrete Semiconductor Products

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IRF2804STRL7PP is a type of single n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET). It is part of International Rectifier\'s SmartPack™ lineup and is used to switch, control, or amplify current in a variety of electrical circuits and applications.

The IRF2804STRL7PP features low RDS(on) values which provide high efficiency while operating with higher switching frequencies, making them well suited for use with DC-DC converters. With a Drain-Source Breakdown Voltage (VDSS) of 60V and a Gate-Source Breakdown Voltage (VGSS) of ±20V, the device is suitable for most general purpose applications. It is also able to withstand large transient voltages and high gate drive currents of up to 8A.

The IRF2804STRL7PP is a popular choice for applications such as switching power supplies, motor control, and load switching. The device is well suited for DC-DC converters due to its low RDS(on) values and can also be used in systems such as audio amplifiers and electronic lighting and appliance controls.

An understanding of the device\'s working principle is essential for proper use and operation. The IRF2804STRL7PP is a voltage-controlled type MOSFET, which means that the current flowing through the drain and source terminals of the device is controlled by the gate-source voltage (VGS). The device is constructed with a metal-oxide semiconductor layer (MOS) between the drain and source which acts as a capacitively-coupled gate. The amount of current flowing between the drain and source is proportional to the amount of charge stored in the MOSFET\'s substrate. A positive voltage applied to the gate attracts electrons to the substrate, enabling current to flow through the channel. A negative voltage applied to the gate repels electrons, and thereby decreases the amount of current flowing through the channel.

The IRF2804STRL7PP has a maximum drain-source current (ID) of 10A, and a maximum drain-source voltage (VDS) of 60V. It also has a maximum power dissipation of up to 130W (8-lead TO-247 package) and up to 75W (8-lead D2PAK or I2PAK package). The maximum junction temperature (Tj) is 150°C.

In summary, the IRF2804STRL7PP is an economical n-channel MOSFET that is suitable for a variety of applications. Its low RDS(on) values makes it well suited for use with DC-DC converters and its gate-source breakdown voltage (VGSS) of ±20V makes it suitable for general purpose applications. With its maximum drain-source current (ID) of 10A, maximum drain-source voltage (VDS) of 60V, and maximum power dissipation of up to 130W, the IRF2804STRL7PP is a reliable and efficient device.

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