| Allicdata Part #: | IRF3205ZPBF-ND |
| Manufacturer Part#: |
IRF3205ZPBF |
| Price: | $ 1.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 75A TO-220AB |
| More Detail: | N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-2... |
| DataSheet: | IRF3205ZPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.20000 |
| 10 +: | $ 1.16400 |
| 100 +: | $ 1.14000 |
| 1000 +: | $ 1.11600 |
| 10000 +: | $ 1.08000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 170W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3450pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 66A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRF3205ZPBF (datasheet) is a N-channel MOSFET used for a variety of applications. It offers a wide range of current and voltage levels and is used in transistor-level logic circuits and data switching. The IRF3205 ZPBF offers high current and voltage levels, as well as low power consumption. This makes it suitable for applications such as power switching, motor control, switching of high voltage power supplies, and low signal voltage application such as logic circuits and data signal switching.
The IRF3205 ZPBF has a maximum drain-source voltage of 30 V, with a drain current of 10A. These features make it an ideal choice for applications such as power switches, motor control, data signal switching, and logic circuits. It also has a low gate-source voltage of 5 V, which makes it suitable for low power applications. The device has a repetitive off-state drain-to-source voltage, with a value of 600 V. This is ideal for applications where line-to-line voltages are higher than the device’s drain-to-source voltage.
The working principle of the IRF3205 ZPBF is based on the Field-effect transistor (FET). FETs are three-terminal devices, with two source and drain terminals, and a gate terminal. The current flow through the device is controlled by the voltage applied to the gate terminal. When the voltage applied to the gate is higher than the threshold level, the device is said to be in the “on” state, and the current flows through the device. When the voltage is lower than the threshold level, the device is said to be in the “off” state, and no current flows through the device.
The IRF3205 ZPBF can also be used as an inverter. This is because the device will switch the output when the input is changed. For example, if the input is low, the output will be high, and vice versa. This is useful in applications where the output needs to be changed depending on the input signal. The device also offers a fast switching time, which is particularly useful in high speed circuits.
The IRF3205 ZPBF is a versatile device that is suitable for a variety of applications. Its high current and voltage levels, low power consumption, and fast switching time make it an ideal choice for power switching, motor control, logic circuits, and data signal switching applications. Its versatile FET operating principle makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF3205ZPBF Datasheet/PDF