IRF3710ZSTRRPBF Allicdata Electronics
Allicdata Part #:

IRF3710ZSTRRPBF-ND

Manufacturer Part#:

IRF3710ZSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 59A D2PAK
More Detail: N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2...
DataSheet: IRF3710ZSTRRPBF datasheetIRF3710ZSTRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF3710ZSTRRPBF transistor is a single-channel MOS type field effect transistor that can be used for a variety of applications. This type of transistor makes use of metal-oxide-semiconductor technology, which is a very versatile energy-efficient transistor design. It is used for power switching devices, high frequency amplifiers, and logic circuits. In this article, we will take a look at the application field and working principle of the IRF3710ZSTRRPBF transistor.

First, let’s take a look at the application field of the IRF3710ZSTRRPBF. This transistor is suitable for power switching devices, such as for motor drives and other switching operations that require fast switching times. It is also used for high frequency amplifiers, where the high frequency response of the transistor can enable the amplification of signals with little distortion. This type of transistor is also used for logic circuits, where the transistor’s good emissions control and better noise immunity enable reliable operation.

The IRF3710ZSTRRPBF transistor is operated by two basic input signals – the source voltage and the gate voltage. The source voltage supplies the power to the transistor, while the gate voltage is used to regulate the current flow. In order to switch the transistor on, a certain value of the gate voltage should be applied. This voltage is usually a positive voltage, and is usually around 3 to 7 volts for this type of transistor. This voltage is known as the threshold voltage, and when the voltage reaches this value, the transistor will be switched on.

Once the transistor is on, a current known as the drain current will be delivered to the drain terminal of the transistor. The drain current is determined by the current flowing through the MOSFET channel. The amount of current flowing through the MOSFET channel is determined by the gate to source voltage, which is the voltage applied from the gate terminal of the transistor to the source terminal. The higher the gate to source voltage, the higher the drain current that will be delivered.

Finally, the transistor will be switched off in the same way. When the voltage applied to the gate terminal falls below the threshold voltage, the transistor will be switched off. At this point, the MOSFET channel will be pinched off, and the flow of current will be stopped. The transistor will then remain in its off state until the gate voltage is applied again to the gate terminal, thereby activating it again.

In summary, the IRF3710ZSTRRPBF transistor is a single-channel MOSFET type transistor that can be used for a variety of power switching applications such as motor drives and high frequency amplifiers, as well as for logic circuits. The transistor is operated by two basic input signals – the source voltage and the gate voltage. When the gate voltage reaches the threshold voltage, the transistor will be switched on, and a drain current will be delivered to the drain terminal of the transistor. The transistor can then be switched off again by reducing the gate voltage below the threshold voltage.

The specific data is subject to PDF, and the above content is for reference

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