| Allicdata Part #: | IRF3706STRR-ND |
| Manufacturer Part#: |
IRF3706STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 77A D2PAK |
| More Detail: | N-Channel 20V 77A (Tc) 88W (Tc) Surface Mount D2PA... |
| DataSheet: | IRF3706STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 88W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF3706STRR is a type of single-sided, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is manufactured by International Rectifier (IR) and is part of their Field Stop Trench HEXFET product line. It features a maximum drain current rating of 7.5A, a maximum drain-source voltage of 60V, and an RDSon of 9.7mΩ at 10V. The device has an optimized structure based on an advanced trench process technology, which helps to provide superior RDSon and high peak current ratings.
In terms of its application field, the IRF3706STRR is most commonly used in a wide range of consumer electronic applications, such as high-current mobile phone chargers, laptop power adapters, notebook PCs and other portable electronic devices. Additionally, it can also be used in automotive applications requiring a low application voltage, AC/DC converters, high-frequency switching circuits and other general-purpose switching applications.
In terms of its working principle, the device acts as a voltage-controlled switch and is designed to be operated in the enhancement mode. When a gate-source voltage greater than the threshold voltage (VGS) is applied, the drain-source current (ID) increases in an exponential manner, while the drain-source resistance (RDSon) drops. This allows the device to act as a switch when the drain-source voltage is low, allowing it to conduct current.
The IRF3706STRR is a versatile device and its optimized structure based on advanced trench process technology makes it ideal for a wide range of applications. Its high current rating and low resistance make it suitable for consuming applications such as high-current mobile phone chargers, while its low application voltage makes it ideal for automotive applications. Additionally, its versatility makes it suitable for a range of other general-purpose switching applications.
The specific data is subject to PDF, and the above content is for reference
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IRF3706STRR Datasheet/PDF