IRF3808STRRPBF Allicdata Electronics
Allicdata Part #:

IRF3808STRRPBF-ND

Manufacturer Part#:

IRF3808STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 106A D2PAK
More Detail: N-Channel 75V 106A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF3808STRRPBF datasheetIRF3808STRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IRF3808STRRPBF is a kind of MOSFET which is mainly used in consumer and industrial electronic devices application. MOSFETs are also referred to as FETs, which stands for “field-effect transistors”. In terms of characteristics, MOSFETs all have two main categories – unipolar and bipolar. IRF3808STRRPBF is a single MOSFET which is included in the unipolar group.

MOSFETs have many advantages over bipolar transistors such as high input impedance, low input capacitance, no current flow during the off state, and low threshold voltage. As a result, MOSFETs have become the main component for switch-mode power supplies, regulated power supplies, and other power tools. IRF3808STRRPBF is a MOSFET mainly used in switch-mode power supplies and vehicle switchgear, due to its good heat dissipating properties.

Apart from the switch-mode power supply application, IRF3808STRRPBF can also be used in other consumer applications such as laptops, TVs, and other household devices. Furthermore, IRF3808STRRPBF can be used in industrial applications such as automotive, aviation and aerospace, and military applications due to its tolerance to high temperature and corrosion.

The IRF3808STRRPBF works using the electronics principle of gate control. This means that the input gate voltage is used to control the current that flows through the device. This can be done by varying the resistance of the gate, which can be done by adding bias voltage onto the gate terminal. The gate voltage is then used to control the current that flows through the transistor.

To use IRF3808STRRPBF, it is necessary to have a control circuit to supply the gate with the correct bias voltage. This circuit is usually built around an IC like the LM317. The output of the LM317 is then fed to the gate of the IRF3808STRRPBF. By varying the bias voltage, the resistance of the gate can be varied and this will allow the current flowing through the device to be adjusted accordingly.

The IRF3808STRRPBF is an ideal choice for use in applications that require a fast switching and high power handling capability. With its good heat dissipating properties, it is suitable for applications where power dissipation is a consideration. Furthermore, its non-saturating gate impedance along with good input capacitance and low on state resistance, make it a popular choice for power applications.

The specific data is subject to PDF, and the above content is for reference

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