IRF3711ZL

Vgs(th) (Max) @ Id:	2.45V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2150pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	92A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF3711ZL is a type of MOSFET transistor and can be found in the category for single transistors and FETs (Field Effect Transistors). The IRF3711ZL is a P-Channel enhancement type MOSFET, meaning it is suitable for use in a variety of electric circuits, as it enhances (increases) signal current or voltage when it is used. This makes it ideal for applications where signal control is required.The IRF3711ZL is a MOSFET power transistor, meaning it is built using a particular type of construction, where the device operates when the voltage and electric field that is applied to the device is large enough to cause electrons to break away from the excess of cations that exist within the device. By breaking away, these electrons become active and travel through the gate-source openings in the transistor and allow the device to pass current.The IRF3711ZL has many applications, such as powering LED drivers, variable speed motor drives, switching power supplies and various other consumer electronics. It is also used in the telecommunications industry for PABX switching and in the network communication industry for switch matrix systems.When in use, the IRF3711ZL behaves like a variable resistor, offering a variable resistance that changes significantly when the voltage applied to the gate is changed. This is known as field effect, as instead of a resistor or conductor, the transistor uses an electric field to control the flow of electrons, thus modulating the current flow throughout the device.When the voltage applied to the gate is increased, the electron flow through the device is reduced and the resistance increases, meaning it is more difficult for electrons to pass through the device. Conversely, when the voltage applied to the gate is decreased, electrons can pass through the device more easily and therefore the resistance to the flow of current decreases.The IRF3711ZL is capable of operating at a maximum continuous drain current of 17A (maximum DC drain current), and a maximum of 128W (maximum power dissipation), so it is suitable for use in high power applications such as switching power supplies and PABX switching systems. In addition, the device can also operate at a maximum of 100V (saturation voltage) and at a maximum frequency of 1.2MHz (operating frequency).In summary, the IRF3711ZL is a type of MOSFET transistor, suitable for use in many high power applications such as LED drivers, variable speed motor drives and switching power supplies; it works by offering a variable resistance that changes depending on the voltage applied to the gate, and it is capable of operating at a maximum of 17A, 128W, 100V and 1.2Mhz.

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