Allicdata Part #: | IRF3575DTRPBF-ND |
Manufacturer Part#: |
IRF3575DTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 303A PQFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 303A (Tc) Sur... |
DataSheet: | IRF3575DTRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 303A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 32-PowerWFQFN |
Supplier Device Package: | 32-PQFN (6x6) |
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IRF3575DTRPBF is a hexagonal arrayed MOSFET transistor that works as a high voltage, low-on-state resistance power switching device. It is designed for high power switching applications, featuring extremely good safe operating area and fast switching performance with low gate drive power. The IRF3575DTRPBF array consists of six separate high voltage n-channel enhancement mode power transistors with power dissipation ratings ranging from 37 to 33V, depending on the applied voltage.
The IRF3575DTRPBF array has a wide range of applications such as low-side electrostatic-suction and driven circuits, charge pumps, high-side power sourcing and battery chargers, etc. It can be used as an effective switching device in automotive, consumer, audio, industrial, educational and communication systems. It is also widely used in power supplies and power management systems, and many other applications where there is a demand for high voltage and low on-state resistance.
The device has an advanced construction which enables it to operate at high frequency range up to 5MHz. Its low gate drive power makes it suitable for use in very low-power applications. The gate voltage required to turn on the device is very low, and the turn-off speed is very fast, which makes it suitable for use in battery powering applications. It also features a high voltage and current rating, which enable it to drive higher loads than other kinds of transistors.
The working principle of IRF3575DTRPBF has been designed to enable it to provide three output states. When the gate voltage is low, the transistor is held in the off state. When the gate voltage is increased to a certain point, the transistor is switched to the conducting (on) state, allowing current to flow. When the gate voltage is reduced back to the starting point, the device switches back to the off state. By managing the gate voltage, digital pulses can be generated to provide more complex functions, such as switching ON and OFF specific loads in applications.
The combination of the high voltage and gate drive power makes IRF3575DTRPBF ideal for use in a wide range of high power applications, such as DC-DC converters, LED lighting, automotive power circuits, and many others. The excellent performance characteristics of the array make it an ideal choice for low-cost and low-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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