IRF3205ZLPBF Allicdata Electronics
Allicdata Part #:

IRF3205ZLPBF-ND

Manufacturer Part#:

IRF3205ZLPBF

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A TO-262
More Detail: N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-2...
DataSheet: IRF3205ZLPBF datasheetIRF3205ZLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.50000
10 +: $ 0.48500
100 +: $ 0.47500
1000 +: $ 0.46500
10000 +: $ 0.45000
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRF3205ZLPBF Application Field and Working Principle

The IRF3205ZLPBF is an N-Channel, Power Field-Effect Transistor (FET) manufactured by International Rectifier. It is a low-power FET with a maximum drain current of 55 A, a maximum drain-source voltage of 55 V, a maximum gate-source voltage of ±20 V, and a maximum gate-channel voltage of ±20 V. This transistor features an incredibly low on-resistance of 3.4 Ω at a drain current of 10 A and a VGS of 10 V.

The IRF3205ZLPBF can be used in a variety of applications, including: amplification, motor control, power conversion, switching power supplies, and audio power amplifiers. It is also an excellent choice for powering low- and medium-power circuits and devices.

The working principle of the IRF3205ZLPBF is similar to that of other FETs. It functions as an electric switch, with the drain being the "on/off" switch. When the gate voltage is at 0 V or below, the drain-source channel is resistive, allowing current to flow through it, thus allowing the transistor to be "on". When the gate voltage is raised above the threshold voltage, the drain-source channel becomes non-resistive, preventing current from flowing and thus allowing the transistor to shown "off".

To achieve the desired performance, the FET must be driven with a voltage source between the gate and the source. Depending on the applied voltage, the drain current can be adjusted accordingly. This makes it an extremely versatile and powerful tool for controlling current in circuits.

In addition to its excellent performance, the IRF3205ZLPBF also has a wide operating temperature range, high frequency, and high-input impedance, making it an ideal choice for power conversion and audio power amplifiers. With its low on-resistance and high power handling capabilities, the IRF3205ZLPBF is a great choice for high-power applications.

In conclusion, the IRF3205ZLPBF is a highly reliable, cost-effective, and versatile N-Channel power field-effect transistor. It is perfect for powering low- and medium-power circuits and devices, as well as audio power amplifiers and switching power supplies. With its low on-resistance, high power handling capabilities, wide operating temperature range, high frequency, and high input impedance, the IRF3205ZLPBF is the ideal choice for powering a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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