Allicdata Part #: | IRF3711ZPBF-ND |
Manufacturer Part#: |
IRF3711ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A TO-220AB |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Through Hole TO-22... |
DataSheet: | IRF3711ZPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.IRF3711ZPBF Application Field and Working Principle
The IRF3711ZPBF is an N-Channel Power MosFET which is used for switching and linear applications in power supplies, battery management, motor drives and protection circuits. It has a drain-source voltage of 100V, a drain current of 17A, and on-resistance of 0.0022 ohm.
The IRF3711ZPBF is a monolithic integrated structure, consisting of a silicon substrate, an insulator layer, a gate oxide layer, a gate electrode, and a drain and source region. The silicon substrate contains two layers of N-type silicon, the insulator layer is composed of silicon oxide, and the gate oxide layer is composed of aluminium oxide. The gate electrode, which is a polysilicon layer, is connected to an external terminal through a metal lead.
The working principle of the IRF3711ZPBF is based on three main factors: the gate-source voltage, the drain-source voltage, and the drain current. The gate-source voltage (commonly referred to as the gate voltage) is the voltage difference between the gate and the source terminals. The drain-source voltage is the voltage difference between the drain and source terminals, and the drain current is the current through the device from the drain to the source.
When a gate voltage is applied to the device, the electrons in the silicon substrate are attracted to the gate electrode, creating a conducting channel between the source and the drain. This channel allows for current to flow through the device from the source to the drain. The magnitude of the current is determined by the applied gate voltage, the drain-source voltage, and the drain current.
The application field of the IRF3711ZPBF is extremely wide, ranging from the use of power supplies to switching and audio amplifiers. It is especially popular among manufacturers and designers of computers and communication equipment due to its wide range of uses and its low on-resistance, making it a suitable choice for applications in which power consumption and heat generation are important considerations.
The IRF3711ZPBF is usually used in power supplies, battery management, motor drives, and various other applications. In particular, it is used for power conversion services, providing efficient and reliable power conversion from one source to another. Additionally, it can be used for switching and linear applications in power circuits, providing reliable operation with low power consumption. As it has an incredibly low on-resistance, it is also used in applications where heat dissipation is a concern.
In conclusion, the IRF3711ZPBF is a versatile and reliable power MosFet which can be used in a wide range of applications. Its low on-resistance and excellent performance make it a suitable choice for manufacturers and designers of various electronic devices. It is easy to use and provides reliable operation with low power consumption in various applications, making it an ideal choice for power supplies, battery management, motor drives, and other protection circuits.
The specific data is subject to PDF, and the above content is for reference
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