IRF3706PBF Allicdata Electronics
Allicdata Part #:

IRF3706PBF-ND

Manufacturer Part#:

IRF3706PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 77A TO-220AB
More Detail: N-Channel 20V 77A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRF3706PBF datasheetIRF3706PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3706PBF is a premium-performance power MOSFET that provides a high level of performance in a variety of applications. The device features an ultra-low on-resistance, fast switching speed and high current capacity, making it ideal for a variety of power conversion applications such as switching DC-DC converters, motor drives and automotive systems. This application note provides an overview of the features and characteristics of the IRF3706PBF, and outlines its typical applications and working principle.

The IRF3706PBF is an N-channel, depletion-mode power MOSFET with a maximum drain-source voltage rating of 200 V. The device is designed for use in applications requiring a low on-resistance and fast-switching speed. It has an ultra-low on-resistance of 0.0037 Ω at VGS = 10 V, making it highly efficient for a range of power conversion circuits such as DC-DC converters and motor drives. Its fast switching speed also allows for higher efficiency and greater control in a range of applications.

The IRF3706PBF is capable of a maximum drain current of 70 A and is capable of dissipating up to 980W at a case temperature of 25°C. The device is optimized for applications requiring a low on-resistance and fast switching speed, such as the control of fan motors and power supplies. Additionally, the device is capable of withstanding a transient voltage of up to 400 V and is suitable for use in automotive applications where fault protection is required.

The working principle of the IRF3706PBF is simple. The device is an N-channel power MOSFET, which means that it contains a gate, drain, and source. When a positive voltage is applied to the gate, it attracts electrons from the source, which then modulate the resistance between the drain and source. This modulation of the resistance results in a change in the current flowing through the device, which can be used to control other components in a system.

The IRF3706PBF is an ideal choice for a range of applications such as motor drives, power supplies, switchedmode power supplies, lighting systems, automotive systems, and any other circuit where a high level of performance is required. In addition, the device is suitable for use in high-temperature environments, making it an ideal choice for automotive applications. Furthermore, the device’s fast switching speed and low on-resistance make it ideal for demanding power conversion applications.

In conclusion, the IRF3706PBF is an excellent power MOSFET for a variety of applications. It provides a low on-resistance and fast-switching speed for high power conversion efficiency and greater control. Additionally, its high voltage tolerance makes it suitable for use in automotive applications requiring fault protection. As such, the device is an ideal choice for a range of applications from motor drives to automotive systems.

The specific data is subject to PDF, and the above content is for reference

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