IRF3707SPBF

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	87W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1990pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	12.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	62A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF3707SPBF is a general-purpose, high-side N-Channel MOSFET. It is built with the industry\'s leading technology, making it ideal for use in a variety of applications that require reliable performance and extended service life. The IRF3707SPBF is designed to provide excellent on-state switching performance, making it an ideal choice for high-current switching applications.The IRF3707SPBF is categorized as a single N-Channel MOSFET. It is designed for use in applications needing low gate drive requirements and low on-state resistance. The device also comes with internal temperature compensation, allowing for improved efficiency and reliability. Additionally, the IRF3707SPBF features a blanking feature to suppress current peaks during turn-on.The IRF3707SPBF is typically used in a variety of applications. These applications include switching power supplies, high-side switch applications, and power amplifiers. Additionally, this MOSFET is suitable for use in LED lighting, portable electronics, notebooks, and automotive applications.The IRF3707SPBF is an N-Channel MOSFET that operates over an operating voltage range of 4.5V to 60V. It is able to operate at continuous forward currents of up to 100A, making it suitable for low resistance, high-current applications. The MOSFET also has a typical gate-source threshold voltage of 2V and a maximum drain-source on-state resistance of 4mOhms.As for its working principle, the IRF3707SPBF is designed to be a simple metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a voltage-controlled semiconductor element which consists of a metal gate electrode and an insulated gate. The insulated gate is surrounded by a metal layer that acts as the channel connecting the source and drain.When a voltage is applied across the MOSFET, it modifies the electrical characteristics of the metal-oxide-semiconductor structure. When a negative voltage is applied to the gate, the resistance between the source and drain decreases and current can flow through the channel connecting them. This is known as source-drain current and is what allows the IRF3707SPBF MOSFET to work.The IRF3707SPBF is a single N-Channel MOSFET that is typically used in a variety of applications requiring reliable performance and extended service life. It is designed to provide excellent on-state switching performance, and its internal temperature compensation and blanking feature improve the device\'s efficiency and reliability. The MOSFET is typically used for switching power supplies, high-side switch applications, and power amplifiers, but it is also suitable for use in LED lighting, portable electronics, notebooks, and automotive applications. Its working principle is based on the operation of a simple MOSFET which consists of a metal gate electrode and an insulated gate, and it operates via source-drain current when a negative voltage is applied to the gate.

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