Allicdata Part #: | IRF3711PBF-ND |
Manufacturer Part#: |
IRF3711PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 110A TO-220AB |
More Detail: | N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Throu... |
DataSheet: | IRF3711PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF3711PBF is an enhancement-mode, n-channel MOSFET that offers high-current and low-voltage switching applications in power electronics designs. It provides a unique combination of high on-state resistance, fast switching speed, and minimal current leakage that make it an excellent choice for high-speed, power-control applications.
The IRF3711PBF device features the signature high-power capability and reliability of an IRF device. It is constructed using advanced MOSFET technology that offers industry-leading power performance. As a result, the device is reliable in applications where fast switching speeds and high current demands are needed.
The IRF3711PBF has an operating drain-to-source voltage of 650V, which enables it to be used in high-power applications such as motor control, pulsed laser diode control, and motor drives. It also has excellent switching performance, with a low gate-to-source capacitance of 30pF and a low input capacitance of 13pF. The device has a drain current of 16A and a source current of 16A.
The IRF3711PBF has a low threshold voltage, which means it can be used in applications where low-voltage switching is required. The device also has an excellent thermal resistance of 0.2C/W, which maximizes power dissipation and helps to reduce power losses. The device features a low on-resistance of 0.12Ohms, giving it an outstanding pulse current capability of 8A.
The IRF3711PBF is ideal for use in high-frequency switching applications, allowing for a high-level response speed and low power dissipation. It is also suitable for use in systems with high input-switching-signal noise, as the device features low gate charge and low output charge. In addition, it offers high stability and low switching losses.
The IRF3711PBF can be operated both in high-peak current and low-ripple modes, making it suitable for applications where fast transit times and low voltage drop across the device are desired. The device has a robust package that enables it to provide excellent reliability in high-power, high-temperature conditions. It also has an insulation rating of UL 94V-1.
The IRF3711PBF is an excellent choice for high-current and low-voltage switching applications, as it offers high on-state resistance, fast switching speed, and minimal current leakage. Its compact package and high-power capability make it an ideal choice for power electronics designers looking to reduce heat, minimize power losses, and improve system reliability. The device also offers excellent stability and low switching losses.
The specific data is subject to PDF, and the above content is for reference
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