IRF3205ZSTRR Allicdata Electronics
Allicdata Part #:

IRF3205ZSTRR-ND

Manufacturer Part#:

IRF3205ZSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2P...
DataSheet: IRF3205ZSTRR datasheetIRF3205ZSTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IRF3205ZSTRR field is an important matter that has become increasingly popular as more people become aware of its functionality and features. As a field effect transistor (FET), the IRF3205ZSTRR is actually a single-like device that is used to control current and voltage in an electrical circuit. It is a type of n-channel, depletion-mode field effect transistor that is commonly used in power applications. The device can operate with a range of drain currents from 1 to 120 amperes and has a drain-source voltage rating of 80 volts.

The IRF3205ZSTRR is suitable for use with a wide range of AC as well as DC switching applications and can also be used in power-switching applications. The device has a maximum dissipation power of 175 watts at 30 degrees Celsius, making it a great device for applications that require high amount of power. It has an on-state resistance of 0.012 ohms and an off-state capacitance of 8 pF. The device has a gate-source voltage rating of ±20 volts, making it a great device for controlling large amounts of current and voltage.

The working principle of the IRF3205ZSTRR is simple. The device works by allowing the drainage of a current from the source in a direction that is guided by the potential across its gate-drain terminals. When the voltage level of its gate is higher than the voltage level at the source, the current drains from the source side of the device towards the drain. When the voltage at the gate is lower than the voltage at the source, no current is allowed to flow from the source side of the device. This process is continuous and is repeated in order to control the amount of current that is flown in the device.

The IRF3205ZSTRR comes with an integrated thermal protection feature that is designed to provide protection against overheating, protecting devices against short-circuits. The device also features a wide temperature range of operation that can range from -55°C to 150°C, allowing the device to be used in harsh and extreme environments. The device also uses a high-speed body diode to protect against reverse voltage.

The IRF3205ZSTRR is often used in power-switching applications and can handle up to 175 watts of power. Moreover, the device offers excellent performance and is known for its robustness, reliability, and stability. It also offers long-term stability in applications. Additionally, the device is highly integrated and is compatible with many other components, making it an ideal choice for designing applications.

The IRF3205ZSTRR is an incredibly versatile device that provides excellent performance in a wide range of applications. Its integrated thermal protection and low on-state resistance make it a great choice for power-switching applications, and its integrated body diode provides protection against reverse voltages. Moreover, its wide range of operating temperatures, its integration with other components, and its robustness and reliability make it a great device for use in many applications.

The specific data is subject to PDF, and the above content is for reference

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