IRF3315PBF Allicdata Electronics
Allicdata Part #:

IRF3315PBF-ND

Manufacturer Part#:

IRF3315PBF

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 23A TO-220AB
More Detail: N-Channel 150V 23A (Tc) 94W (Tc) Through Hole TO-2...
DataSheet: IRF3315PBF datasheetIRF3315PBF Datasheet/PDF
Quantity: 694
1 +: $ 1.27000
10 +: $ 1.23190
100 +: $ 1.20650
1000 +: $ 1.18110
10000 +: $ 1.14300
Stock 694Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF3315PBF is an N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This is a single-channel, depletion-mode MOSFET, meaning that its gate voltage is higher than its source voltage, which causes a current to flow through the transistor. This current can be used to switch other electrical components, such as a DC motor or a light-emitting diode (LED).

Because the IRF3315PBF is a depletion-mode MOSFET, it has a low on-resistance when its gate voltage is high, and a high on-resistance when its gate voltage is low. As a result, it is often used in applications where electrical signals need to be switched on or off quickly, such as motor drives, LED drivers, and pulse width modulation circuits. It can also be used for general-purpose switching and as a switch for low-frequency electronic circuits.

The IRF3315PBF comes in a small SOT (small outline transistor) package and is capable of switching currents up to 19A with a gate-source voltage of +/-20V. It has an operating temperature range of -55 degrees Celsius to 175 degrees Celsius, so it can be used in rugged applications. Its Rds (on) is 0.045 Ohms at a gate-source voltage of 10V and 10A.

The IRF3315PBF is a popular choice for designers looking for an MOSFET with an impressive combination of low-on resistance, switching speed, and power dissipation. It has a low drain-source capacitance, which makes it suitable for high-frequency applications. It also has an operating range of -55 degrees Celsius to 175 degrees Celsius, so it can be used in a variety of different temperature environments.

The working principle behind the IRF3315PBF is simple. When a voltage is applied to the gate, electrons move from the source towards the drain via the MOSFET\'s channel. This creates a conductive path between the source and drain, allowing current to flow. The amount of current that flows is dependent on the gate-source voltage. The higher the gate-source voltage, the more electrons will be attracted towards the drain and the higher the current will be.

The IRF3315PBF is a simple and effective way to handle high current needs in a variety of applications. It is a reliable and versatile MOSFET, and its low on-resistance and voltage transfer characteristics make it well-suited for use in low-side switch applications. It is also a cost-effective solution, with a small footprint, so it can be used in cost-sensitive applications. As such, it is an ideal choice for designers looking for an MOSFET with an impressive combination of features.

The specific data is subject to PDF, and the above content is for reference

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